Modeling of Semiconductor Electrostatic Qubits Realized Through Coupled Quantum Dots

Considering the enormous advances in nanometer-scale CMOS technology that now allows one to reliably fabricate billions of switching devices on a single silicon die, electrostatically controlled quantum dots (implemented as quantum wells) appear to be promising candidates for a massive implementatio...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE access 2019, Vol.7, p.49262-49278
Hauptverfasser:	Giounanlis, Panagiotis, Blokhina, Elena, Pomorski, Krzysztof, Leipold, Dirk R., Staszewski, Robert Bogdan
Format:	Artikel
Sprache:	eng
Schlagworte:	<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">N -well system CMOS CMOS technology Computers coupled semiconductor quantum dot decoherence time electrostatic semiconductor qubit entangled electrons entanglement Ions Josephson junctions Logic circuits Modelling occupancy oscillations predictor-corrector scheme quantum computer Quantum computers Quantum dots Quantum entanglement Quantum wells Qubit Qubits (quantum computing) tight-binding method time-dependent Schrödinger equation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!