A 3-D TCAD Framework for NBTI-Part I: Implementation Details and FinFET Channel Material Impact

The time kinetics of interface trap generation and passivation ( \Delta {N} _{\textsf {IT}} ) and its contribution ( \Delta {V} _{\textsf {IT}} ) during and after negative bias temperature instability (NBTI) stress is calculated by using Sentaurus TCAD. The framework consists of Sentaurus process fo...

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Veröffentlicht in:	IEEE transactions on electron devices 2019-05, Vol.66 (5), p.2086-2092
Hauptverfasser:	Tiwari, Ravi, Parihar, Narendra, Thakor, Karansingh, Wong, Hiu Yung, Motzny, Steve, Choi, Munkang, Moroz, Victor, Mahapatra, Souvik
Format:	Artikel
Sprache:	eng
Schlagworte:	Band structure Beta decay Bulk density Defects Diffusion Electric fields Electron capture FinFET Hole density Insulators Interface reactions Logic gates Mathematical model Negative bias temperature instability negative bias temperature instability (NBTI) Occupancy Reaction kinetics reaction–diffusion (RD) model Si and SiGe channels Silicon Stability Strain Stress TCAD Thermal variables control trap generation and passivation
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