Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide

Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT). In this paper, we propose a technique to suppress direct source-to-drain BTBT by increasing the effectiv...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2019, Vol.7, p.435-443
Hauptverfasser:	Garg, Shelly, Saurabh, Sneh
Format:	Artikel
Sprache:	eng
Schlagworte:	ambipolar current Doping Field effect transistors Global Positioning System Ground plane Logic gates Scalability Semiconductor devices short-channel effects SOI SOI (semiconductors) TFETs Threshold voltage Tunneling
Online-Zugang:	Volltext
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