A 10-MHz GaNFET-Based-Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation
This paper presents design of an isolated high-step-down dc-dc converter based on a class-DE power stage, operating at a 10-MHz switching frequency using enhancement-mode gallium nitride transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is prese...
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| Veröffentlicht in: | IEEE transactions on industry applications 2019-07, Vol.55 (4), p.3889-3900 |
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| creator | Thummala, Prasanth Yelaverthi, Dorai Babu Zane, Regan Andrew Ouyang, Ziwei Andersen, Michael A. E. |
| description | This paper presents design of an isolated high-step-down dc-dc converter based on a class-DE power stage, operating at a 10-MHz switching frequency using enhancement-mode gallium nitride transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step down from 200-300 V input to 0-28 V output. Commercially available magnetic materials were explored and the high-frequency resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite-element simulations have been performed to estimate the parameters of magnetics at 10-MHz. Experimental results are presented at 12 W, 254 V input to 22 V output and 5 W, 254 V input to 14 V output on a laboratory prototype operating at 10-MHz. At 20 W, the experimental prototype achieved an efficiency of 85.2%. |
| doi_str_mv | 10.1109/TIA.2019.2904455 |
| format | Article |
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E.</creator><creatorcontrib>Thummala, Prasanth ; Yelaverthi, Dorai Babu ; Zane, Regan Andrew ; Ouyang, Ziwei ; Andersen, Michael A. E.</creatorcontrib><description>This paper presents design of an isolated high-step-down dc-dc converter based on a class-DE power stage, operating at a 10-MHz switching frequency using enhancement-mode gallium nitride transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step down from 200-300 V input to 0-28 V output. Commercially available magnetic materials were explored and the high-frequency resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite-element simulations have been performed to estimate the parameters of magnetics at 10-MHz. Experimental results are presented at 12 W, 254 V input to 22 V output and 5 W, 254 V input to 14 V output on a laboratory prototype operating at 10-MHz. 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(IEEE) 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-d1dce5b98cdf856a4deef0692d4fd007ab47b658e516d9abe8ee459fa6186d8e3</citedby><cites>FETCH-LOGICAL-c357t-d1dce5b98cdf856a4deef0692d4fd007ab47b658e516d9abe8ee459fa6186d8e3</cites><orcidid>0000-0003-2119-2913 ; 0000-0002-5612-0541 ; 0000-0001-7380-9351 ; 0000-0001-7046-9224</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8664603$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8664603$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Thummala, Prasanth</creatorcontrib><creatorcontrib>Yelaverthi, Dorai Babu</creatorcontrib><creatorcontrib>Zane, Regan Andrew</creatorcontrib><creatorcontrib>Ouyang, Ziwei</creatorcontrib><creatorcontrib>Andersen, Michael A. E.</creatorcontrib><title>A 10-MHz GaNFET-Based-Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation</title><title>IEEE transactions on industry applications</title><addtitle>TIA</addtitle><description>This paper presents design of an isolated high-step-down dc-dc converter based on a class-DE power stage, operating at a 10-MHz switching frequency using enhancement-mode gallium nitride transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step down from 200-300 V input to 0-28 V output. Commercially available magnetic materials were explored and the high-frequency resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite-element simulations have been performed to estimate the parameters of magnetics at 10-MHz. Experimental results are presented at 12 W, 254 V input to 22 V output and 5 W, 254 V input to 14 V output on a laboratory prototype operating at 10-MHz. At 20 W, the experimental prototype achieved an efficiency of 85.2%.</description><subject>Class DE</subject><subject>Converters</subject><subject>DC-DC power converters</subject><subject>dc–dc conversion</subject><subject>Electronics</subject><subject>Finite element method</subject><subject>finite-element modeling (FEM)</subject><subject>Gallium nitride</subject><subject>gallium nitride (GaN)</subject><subject>Gallium nitrides</subject><subject>high frequency (HF)</subject><subject>Inductance</subject><subject>Inverters</subject><subject>Magnetic materials</subject><subject>Parameter estimation</subject><subject>Prototypes</subject><subject>resonant conversion</subject><subject>Semiconductor devices</subject><subject>soft switching</subject><subject>Switches</subject><subject>Switching frequency</subject><subject>Topology</subject><subject>Transistors</subject><issn>0093-9994</issn><issn>1939-9367</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kD1PwzAURS0EEqWwI7FYYnax44_EbCWBNlILA2W2nPglpCpJsVMQ_HpStWJ6w7v3HukgdM3ohDGq71b5dBJRpieRpkJIeYJGTHNNNFfxKRpRqjnRWotzdBHCmlImJBMjZKeYUbKc_-KZfX56XJEHG8CRPHQb24PD86Z-x689bEnWfbc4S0mW4rRrv8D34O9xBqGpW2xbh5e2bqFvyoDz4R36prZ907WX6KyymwBXxztGbwMnnZPFyyxPpwtSchn3xDFXgix0UroqkcoKB1BRpSMnKkdpbAsRF0omIJly2haQAAipK6tYolwCfIxuD7tb333uBr5ZdzvfDkgTRZILxbSUQ4oeUqXvQvBQma1vPqz_MYyavUgziDR7keYocqjcHCoNAPzHE6WEopz_AfshbVQ</recordid><startdate>201907</startdate><enddate>201907</enddate><creator>Thummala, Prasanth</creator><creator>Yelaverthi, Dorai Babu</creator><creator>Zane, Regan Andrew</creator><creator>Ouyang, Ziwei</creator><creator>Andersen, Michael A. 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E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 10-MHz GaNFET-Based-Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation</atitle><jtitle>IEEE transactions on industry applications</jtitle><stitle>TIA</stitle><date>2019-07</date><risdate>2019</risdate><volume>55</volume><issue>4</issue><spage>3889</spage><epage>3900</epage><pages>3889-3900</pages><issn>0093-9994</issn><eissn>1939-9367</eissn><coden>ITIACR</coden><abstract>This paper presents design of an isolated high-step-down dc-dc converter based on a class-DE power stage, operating at a 10-MHz switching frequency using enhancement-mode gallium nitride transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a step down from 200-300 V input to 0-28 V output. Commercially available magnetic materials were explored and the high-frequency resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite-element simulations have been performed to estimate the parameters of magnetics at 10-MHz. Experimental results are presented at 12 W, 254 V input to 22 V output and 5 W, 254 V input to 14 V output on a laboratory prototype operating at 10-MHz. At 20 W, the experimental prototype achieved an efficiency of 85.2%.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TIA.2019.2904455</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0003-2119-2913</orcidid><orcidid>https://orcid.org/0000-0002-5612-0541</orcidid><orcidid>https://orcid.org/0000-0001-7380-9351</orcidid><orcidid>https://orcid.org/0000-0001-7046-9224</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Class DE Converters DC-DC power converters dc–dc conversion Electronics Finite element method finite-element modeling (FEM) Gallium nitride gallium nitride (GaN) Gallium nitrides high frequency (HF) Inductance Inverters Magnetic materials Parameter estimation Prototypes resonant conversion Semiconductor devices soft switching Switches Switching frequency Topology Transistors |
| title | A 10-MHz GaNFET-Based-Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation |
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