Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator

The effectiveness and long-term stability of the surface transfer doping of H-terminated diamond induced by a very thin V 2 O 5 /Al 2 O 3 double layer were deeply investigated. The experimental results demonstrate that the deposition of a 5 nm Al 2 O 3 layer does not alter the transfer doping proper...

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Veröffentlicht in:	IEEE electron device letters 2019-05, Vol.40 (5), p.765-768
Hauptverfasser:	Verona, C., Benetti, M., Cannata, D., Ciccognani, W., Colangeli, S., Di Pietrantonio, F., Limiti, E., Marinelli, M., Verona-Rinati, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Annealing Current measurement Diamond Diamonds Doping hydrogenated diamond surface Interface stability Logic gates MOSFET MOSFETs Surface stability transfer doping Vanadium pentoxide
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