GaN based high electron mobility transistors for microwave and RF control applications

Heterojunction field-effect transistors (HFETs) or high-electron mobility transistors (HEMTs) based on Al/sub x/Ga/sub 1-x/N/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed fo...

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Hauptverfasser:	Drozdovski, N., Caverly, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	FETs Gallium nitride HEMTs Heterojunctions Microwave devices MODFETs Radio frequency Solid modeling Switches Threshold voltage
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creator	Drozdovski, N. Caverly, R.
description	Heterojunction field-effect transistors (HFETs) or high-electron mobility transistors (HEMTs) based on Al/sub x/Ga/sub 1-x/N/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in this application. It was experimentally established that the HFET resistance is low for voltages of +1.0 volts, and that the capacitive reactance increases for DC gate voltages below the threshold voltage of approximately -1.5 volts.
doi_str_mv	10.1109/IMOC.1999.866242
format	Conference Proceeding
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A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in this application. It was experimentally established that the HFET resistance is low for voltages of +1.0 volts, and that the capacitive reactance increases for DC gate voltages below the threshold voltage of approximately -1.5 volts.</description><identifier>ISBN: 0780358074</identifier><identifier>ISBN: 9780780358072</identifier><identifier>DOI: 10.1109/IMOC.1999.866242</identifier><language>eng</language><publisher>IEEE</publisher><subject>FETs ; Gallium nitride ; HEMTs ; Heterojunctions ; Microwave devices ; MODFETs ; Radio frequency ; Solid modeling ; Switches ; Threshold voltage</subject><ispartof>1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, 1999, Vol.2, p.552-555 vol. 2</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/866242$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/866242$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Drozdovski, N.</creatorcontrib><creatorcontrib>Caverly, R.</creatorcontrib><title>GaN based high electron mobility transistors for microwave and RF control applications</title><title>1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference</title><addtitle>IMOC</addtitle><description>Heterojunction field-effect transistors (HFETs) or high-electron mobility transistors (HEMTs) based on Al/sub x/Ga/sub 1-x/N/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in this application. It was experimentally established that the HFET resistance is low for voltages of +1.0 volts, and that the capacitive reactance increases for DC gate voltages below the threshold voltage of approximately -1.5 volts.</description><subject>FETs</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>Heterojunctions</subject><subject>Microwave devices</subject><subject>MODFETs</subject><subject>Radio frequency</subject><subject>Solid modeling</subject><subject>Switches</subject><subject>Threshold voltage</subject><isbn>0780358074</isbn><isbn>9780780358072</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jjsLwjAURgMi-NzF6f4Ba9raR-bia1BBxFWuNdoraVKSoPjvFXT2W85wOPAxNgp5EIZcTNebXRGEQoggT9NoFrVYj2c5j5OcZ7MOGzp355_FIkki3mXHJW7hjE5eoKJbBVLJ0lujoTZnUuRf4C1qR84b6-BqLNRUWvPEhwTUF9gvoDT6UyjAplFUoiej3YC1r6icHP7YZ-PF_FCsJiSlPDWWarSv0_dh_Fe-AfhZQME</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Drozdovski, N.</creator><creator>Caverly, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1999</creationdate><title>GaN based high electron mobility transistors for microwave and RF control applications</title><author>Drozdovski, N. ; Caverly, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_8662423</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>FETs</topic><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>Heterojunctions</topic><topic>Microwave devices</topic><topic>MODFETs</topic><topic>Radio frequency</topic><topic>Solid modeling</topic><topic>Switches</topic><topic>Threshold voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Drozdovski, N.</creatorcontrib><creatorcontrib>Caverly, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Drozdovski, N.</au><au>Caverly, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>GaN based high electron mobility transistors for microwave and RF control applications</atitle><btitle>1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference</btitle><stitle>IMOC</stitle><date>1999</date><risdate>1999</risdate><volume>2</volume><spage>552</spage><epage>555 vol. 2</epage><pages>552-555 vol. 2</pages><isbn>0780358074</isbn><isbn>9780780358072</isbn><abstract>Heterojunction field-effect transistors (HFETs) or high-electron mobility transistors (HEMTs) based on Al/sub x/Ga/sub 1-x/N/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in this application. It was experimentally established that the HFET resistance is low for voltages of +1.0 volts, and that the capacitive reactance increases for DC gate voltages below the threshold voltage of approximately -1.5 volts.</abstract><pub>IEEE</pub><doi>10.1109/IMOC.1999.866242</doi></addata></record>
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identifier	ISBN: 0780358074
ispartof	1999 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, 1999, Vol.2, p.552-555 vol. 2
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language	eng
recordid	cdi_ieee_primary_866242
source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	FETs Gallium nitride HEMTs Heterojunctions Microwave devices MODFETs Radio frequency Solid modeling Switches Threshold voltage
title	GaN based high electron mobility transistors for microwave and RF control applications
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