Fabrication of Superconductor Integrated Circuits of D-Band Dual-Polarization Balanced SIS Mixers

We have fabricated prototype superconductor integrated circuits (ICs), which accommodate planar orthomode transducer (OMT) and balanced superconductor-insulator-superconductor (SIS) mixers operating at D-band (125-163 GHz). The fabrication of the ICs is different from the conventional SIS mixer fabr...

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Veröffentlicht in:IEEE transactions on applied superconductivity 2019-08, Vol.29 (5), p.1-5
Hauptverfasser: Ezaki, Shohei, Shan, Wenlei, Asayama, Shin'ichiro, Noguchi, Takashi
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container_title IEEE transactions on applied superconductivity
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creator Ezaki, Shohei
Shan, Wenlei
Asayama, Shin'ichiro
Noguchi, Takashi
description We have fabricated prototype superconductor integrated circuits (ICs), which accommodate planar orthomode transducer (OMT) and balanced superconductor-insulator-superconductor (SIS) mixers operating at D-band (125-163 GHz). The fabrication of the ICs is different from the conventional SIS mixer fabrication process in several aspects because of new features and components being introduced and incorporated. In particular, very flat silicon membranes that mechanically support the planar OMT and the waveguide probes for local oscillator coupling were formed with a combination of dry and wet etching methods to completely remove the handle layer and the buried oxide layer of the silicon on insulator substrates. We also applied an anodization passivation of the surface of the ground plane and a via-hole etching process with an i-line stepper in the formation of low-leakage SIS junctions. The SIS junctions of moderately good quality have been fabricated with an average quality factor as high as 18, which indicate the integrity of the junction definition with the complex fabrication of ICs.
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_8658137</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8658137</ieee_id><sourcerecordid>2200823165</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-d15fcaeef05ec979833dc71e6a34337167240c7deef653ee0c219fc61c1635f33</originalsourceid><addsrcrecordid>eNo9kFFLwzAUhYMoOKc_QHwp-NyZmzRt8rhVp4OJQudziOmtZNR2Ji2ov96WDp_uefjOufARcg10AUDV3W5Z5AtGQS2YokxJcUJmIISMmQBxOmQqIJaM8XNyEcKeUkhkImbErM27d9Z0rm2itoqK_oDetk3Z26710abp8MObDssod972rgsjdR-vTFNG972p49e2Nt79TgsrU5vGDnSxKaJn940-XJKzytQBr453Tt7WD7v8Kd6-PG7y5Ta2XKguLkFU1iBWVKBVmZKclzYDTA1POM8gzVhCbVYORCo4IrUMVGVTsJByUXE-J7fT7sG3Xz2GTu_b3jfDS80YpZJxGIpzAhNlfRuCx0ofvPs0_kcD1aNJPZrUo0l9NDl0bqaOQ8R_XqZCAs_4H07Ub1I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2200823165</pqid></control><display><type>article</type><title>Fabrication of Superconductor Integrated Circuits of D-Band Dual-Polarization Balanced SIS Mixers</title><source>IEEE Electronic Library (IEL)</source><creator>Ezaki, Shohei ; Shan, Wenlei ; Asayama, Shin'ichiro ; Noguchi, Takashi</creator><creatorcontrib>Ezaki, Shohei ; Shan, Wenlei ; Asayama, Shin'ichiro ; Noguchi, Takashi</creatorcontrib><description>We have fabricated prototype superconductor integrated circuits (ICs), which accommodate planar orthomode transducer (OMT) and balanced superconductor-insulator-superconductor (SIS) mixers operating at D-band (125-163 GHz). The fabrication of the ICs is different from the conventional SIS mixer fabrication process in several aspects because of new features and components being introduced and incorporated. In particular, very flat silicon membranes that mechanically support the planar OMT and the waveguide probes for local oscillator coupling were formed with a combination of dry and wet etching methods to completely remove the handle layer and the buried oxide layer of the silicon on insulator substrates. We also applied an anodization passivation of the surface of the ground plane and a via-hole etching process with an i-line stepper in the formation of low-leakage SIS junctions. The SIS junctions of moderately good quality have been fabricated with an average quality factor as high as 18, which indicate the integrity of the junction definition with the complex fabrication of ICs.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2019.2902985</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Coplanar waveguides ; Dual polarization (waves) ; Etching ; Fabrication ; Ground plane ; Integrated circuits ; Junctions ; Mixers ; Multi-beam heterodyne receiver ; Q factors ; Silicon ; silicon membrane ; Silicon substrates ; SIS (superconductors) ; superconductor integrated circuits ; superconductor-insulator-superconductor mixer</subject><ispartof>IEEE transactions on applied superconductivity, 2019-08, Vol.29 (5), p.1-5</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-d15fcaeef05ec979833dc71e6a34337167240c7deef653ee0c219fc61c1635f33</citedby><cites>FETCH-LOGICAL-c359t-d15fcaeef05ec979833dc71e6a34337167240c7deef653ee0c219fc61c1635f33</cites><orcidid>0000-0003-0298-5512 ; 0000-0003-4035-2513 ; 0000-0002-0009-0363</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8658137$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8658137$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ezaki, Shohei</creatorcontrib><creatorcontrib>Shan, Wenlei</creatorcontrib><creatorcontrib>Asayama, Shin'ichiro</creatorcontrib><creatorcontrib>Noguchi, Takashi</creatorcontrib><title>Fabrication of Superconductor Integrated Circuits of D-Band Dual-Polarization Balanced SIS Mixers</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>We have fabricated prototype superconductor integrated circuits (ICs), which accommodate planar orthomode transducer (OMT) and balanced superconductor-insulator-superconductor (SIS) mixers operating at D-band (125-163 GHz). The fabrication of the ICs is different from the conventional SIS mixer fabrication process in several aspects because of new features and components being introduced and incorporated. In particular, very flat silicon membranes that mechanically support the planar OMT and the waveguide probes for local oscillator coupling were formed with a combination of dry and wet etching methods to completely remove the handle layer and the buried oxide layer of the silicon on insulator substrates. We also applied an anodization passivation of the surface of the ground plane and a via-hole etching process with an i-line stepper in the formation of low-leakage SIS junctions. The SIS junctions of moderately good quality have been fabricated with an average quality factor as high as 18, which indicate the integrity of the junction definition with the complex fabrication of ICs.</description><subject>Coplanar waveguides</subject><subject>Dual polarization (waves)</subject><subject>Etching</subject><subject>Fabrication</subject><subject>Ground plane</subject><subject>Integrated circuits</subject><subject>Junctions</subject><subject>Mixers</subject><subject>Multi-beam heterodyne receiver</subject><subject>Q factors</subject><subject>Silicon</subject><subject>silicon membrane</subject><subject>Silicon substrates</subject><subject>SIS (superconductors)</subject><subject>superconductor integrated circuits</subject><subject>superconductor-insulator-superconductor mixer</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAUhYMoOKc_QHwp-NyZmzRt8rhVp4OJQudziOmtZNR2Ji2ov96WDp_uefjOufARcg10AUDV3W5Z5AtGQS2YokxJcUJmIISMmQBxOmQqIJaM8XNyEcKeUkhkImbErM27d9Z0rm2itoqK_oDetk3Z26710abp8MObDssod972rgsjdR-vTFNG972p49e2Nt79TgsrU5vGDnSxKaJn940-XJKzytQBr453Tt7WD7v8Kd6-PG7y5Ta2XKguLkFU1iBWVKBVmZKclzYDTA1POM8gzVhCbVYORCo4IrUMVGVTsJByUXE-J7fT7sG3Xz2GTu_b3jfDS80YpZJxGIpzAhNlfRuCx0ofvPs0_kcD1aNJPZrUo0l9NDl0bqaOQ8R_XqZCAs_4H07Ub1I</recordid><startdate>20190801</startdate><enddate>20190801</enddate><creator>Ezaki, Shohei</creator><creator>Shan, Wenlei</creator><creator>Asayama, Shin'ichiro</creator><creator>Noguchi, Takashi</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-0298-5512</orcidid><orcidid>https://orcid.org/0000-0003-4035-2513</orcidid><orcidid>https://orcid.org/0000-0002-0009-0363</orcidid></search><sort><creationdate>20190801</creationdate><title>Fabrication of Superconductor Integrated Circuits of D-Band Dual-Polarization Balanced SIS Mixers</title><author>Ezaki, Shohei ; Shan, Wenlei ; Asayama, Shin'ichiro ; Noguchi, Takashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-d15fcaeef05ec979833dc71e6a34337167240c7deef653ee0c219fc61c1635f33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Coplanar waveguides</topic><topic>Dual polarization (waves)</topic><topic>Etching</topic><topic>Fabrication</topic><topic>Ground plane</topic><topic>Integrated circuits</topic><topic>Junctions</topic><topic>Mixers</topic><topic>Multi-beam heterodyne receiver</topic><topic>Q factors</topic><topic>Silicon</topic><topic>silicon membrane</topic><topic>Silicon substrates</topic><topic>SIS (superconductors)</topic><topic>superconductor integrated circuits</topic><topic>superconductor-insulator-superconductor mixer</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ezaki, Shohei</creatorcontrib><creatorcontrib>Shan, Wenlei</creatorcontrib><creatorcontrib>Asayama, Shin'ichiro</creatorcontrib><creatorcontrib>Noguchi, Takashi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ezaki, Shohei</au><au>Shan, Wenlei</au><au>Asayama, Shin'ichiro</au><au>Noguchi, Takashi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication of Superconductor Integrated Circuits of D-Band Dual-Polarization Balanced SIS Mixers</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2019-08-01</date><risdate>2019</risdate><volume>29</volume><issue>5</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>We have fabricated prototype superconductor integrated circuits (ICs), which accommodate planar orthomode transducer (OMT) and balanced superconductor-insulator-superconductor (SIS) mixers operating at D-band (125-163 GHz). The fabrication of the ICs is different from the conventional SIS mixer fabrication process in several aspects because of new features and components being introduced and incorporated. In particular, very flat silicon membranes that mechanically support the planar OMT and the waveguide probes for local oscillator coupling were formed with a combination of dry and wet etching methods to completely remove the handle layer and the buried oxide layer of the silicon on insulator substrates. We also applied an anodization passivation of the surface of the ground plane and a via-hole etching process with an i-line stepper in the formation of low-leakage SIS junctions. The SIS junctions of moderately good quality have been fabricated with an average quality factor as high as 18, which indicate the integrity of the junction definition with the complex fabrication of ICs.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TASC.2019.2902985</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-0298-5512</orcidid><orcidid>https://orcid.org/0000-0003-4035-2513</orcidid><orcidid>https://orcid.org/0000-0002-0009-0363</orcidid></addata></record>
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subjects Coplanar waveguides
Dual polarization (waves)
Etching
Fabrication
Ground plane
Integrated circuits
Junctions
Mixers
Multi-beam heterodyne receiver
Q factors
Silicon
silicon membrane
Silicon substrates
SIS (superconductors)
superconductor integrated circuits
superconductor-insulator-superconductor mixer
title Fabrication of Superconductor Integrated Circuits of D-Band Dual-Polarization Balanced SIS Mixers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T00%3A09%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20of%20Superconductor%20Integrated%20Circuits%20of%20D-Band%20Dual-Polarization%20Balanced%20SIS%20Mixers&rft.jtitle=IEEE%20transactions%20on%20applied%20superconductivity&rft.au=Ezaki,%20Shohei&rft.date=2019-08-01&rft.volume=29&rft.issue=5&rft.spage=1&rft.epage=5&rft.pages=1-5&rft.issn=1051-8223&rft.eissn=1558-2515&rft.coden=ITASE9&rft_id=info:doi/10.1109/TASC.2019.2902985&rft_dat=%3Cproquest_RIE%3E2200823165%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2200823165&rft_id=info:pmid/&rft_ieee_id=8658137&rfr_iscdi=true