Characteristics of asymmetric quantum well heterostructure lasers and amplifiers
Summary form only given. Theoretical consideration by rate equations has shown that regimes of regular pulse generation at two or three remote optical wavelengths in the range of 790 to 850 nm can be realized in the GaAs-AlGaAs systems with bi- or triple quantum well heterostructure at suitable conf...
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| creator | Afonenko, A.A. Kononenko, V.K. Manak, I.S. Nalivko, S.V. |
| description | Summary form only given. Theoretical consideration by rate equations has shown that regimes of regular pulse generation at two or three remote optical wavelengths in the range of 790 to 850 nm can be realized in the GaAs-AlGaAs systems with bi- or triple quantum well heterostructure at suitable configuration and doping of active and barrier layers. Light pulse duration reaches values about 50 to 100 ps. Transformation of gain bands for TE and TM modes is dependent on the excitation current has been studied and calculations have been performed for the five quantum well GaAs-AlGaAs system. |
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Theoretical consideration by rate equations has shown that regimes of regular pulse generation at two or three remote optical wavelengths in the range of 790 to 850 nm can be realized in the GaAs-AlGaAs systems with bi- or triple quantum well heterostructure at suitable configuration and doping of active and barrier layers. Light pulse duration reaches values about 50 to 100 ps. Transformation of gain bands for TE and TM modes is dependent on the excitation current has been studied and calculations have been performed for the five quantum well GaAs-AlGaAs system.</description><identifier>ISBN: 1557524432</identifier><identifier>ISBN: 9781557524430</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping ; Equations ; Laser theory ; Optical amplifiers ; Optical pulse generation ; Pulse amplifiers ; Pulse generation ; Quantum mechanics ; Quantum well lasers ; Stimulated emission</subject><ispartof>Summaries of papers presented at the Conference on Lasers and Electro-Optics, 1996, p.418</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/864864$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,4036,4037,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/864864$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Afonenko, A.A.</creatorcontrib><creatorcontrib>Kononenko, V.K.</creatorcontrib><creatorcontrib>Manak, I.S.</creatorcontrib><creatorcontrib>Nalivko, S.V.</creatorcontrib><title>Characteristics of asymmetric quantum well heterostructure lasers and amplifiers</title><title>Summaries of papers presented at the Conference on Lasers and Electro-Optics</title><addtitle>CLEO</addtitle><description>Summary form only given. Theoretical consideration by rate equations has shown that regimes of regular pulse generation at two or three remote optical wavelengths in the range of 790 to 850 nm can be realized in the GaAs-AlGaAs systems with bi- or triple quantum well heterostructure at suitable configuration and doping of active and barrier layers. Light pulse duration reaches values about 50 to 100 ps. Transformation of gain bands for TE and TM modes is dependent on the excitation current has been studied and calculations have been performed for the five quantum well GaAs-AlGaAs system.</description><subject>Doping</subject><subject>Equations</subject><subject>Laser theory</subject><subject>Optical amplifiers</subject><subject>Optical pulse generation</subject><subject>Pulse amplifiers</subject><subject>Pulse generation</subject><subject>Quantum mechanics</subject><subject>Quantum well lasers</subject><subject>Stimulated emission</subject><isbn>1557524432</isbn><isbn>9781557524430</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9is0KwjAQhAMi-NcX8LQvINg2qd6L4tGD97LULY0kbd1NkL69OXh2GPgYvlmoTW7MyRRal8VKZSKvY4o2ua7MWt3rHhnbQGwl2FZg7ABl9p4C2xbeEYcQPXzIOegp3UYJHNsQmcChEAvg8AT0k7OdTXOnlh06oezHrdpfL4_6drBE1ExsPfLcnCudWv6VX9TYOm0</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Afonenko, A.A.</creator><creator>Kononenko, V.K.</creator><creator>Manak, I.S.</creator><creator>Nalivko, S.V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Characteristics of asymmetric quantum well heterostructure lasers and amplifiers</title><author>Afonenko, A.A. ; Kononenko, V.K. ; Manak, I.S. ; Nalivko, S.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_8648643</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Doping</topic><topic>Equations</topic><topic>Laser theory</topic><topic>Optical amplifiers</topic><topic>Optical pulse generation</topic><topic>Pulse amplifiers</topic><topic>Pulse generation</topic><topic>Quantum mechanics</topic><topic>Quantum well lasers</topic><topic>Stimulated emission</topic><toplevel>online_resources</toplevel><creatorcontrib>Afonenko, A.A.</creatorcontrib><creatorcontrib>Kononenko, V.K.</creatorcontrib><creatorcontrib>Manak, I.S.</creatorcontrib><creatorcontrib>Nalivko, S.V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Afonenko, A.A.</au><au>Kononenko, V.K.</au><au>Manak, I.S.</au><au>Nalivko, S.V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characteristics of asymmetric quantum well heterostructure lasers and amplifiers</atitle><btitle>Summaries of papers presented at the Conference on Lasers and Electro-Optics</btitle><stitle>CLEO</stitle><date>1996</date><risdate>1996</risdate><spage>418</spage><pages>418-</pages><isbn>1557524432</isbn><isbn>9781557524430</isbn><abstract>Summary form only given. Theoretical consideration by rate equations has shown that regimes of regular pulse generation at two or three remote optical wavelengths in the range of 790 to 850 nm can be realized in the GaAs-AlGaAs systems with bi- or triple quantum well heterostructure at suitable configuration and doping of active and barrier layers. Light pulse duration reaches values about 50 to 100 ps. Transformation of gain bands for TE and TM modes is dependent on the excitation current has been studied and calculations have been performed for the five quantum well GaAs-AlGaAs system.</abstract><pub>IEEE</pub></addata></record> |
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| identifier | ISBN: 1557524432 |
| ispartof | Summaries of papers presented at the Conference on Lasers and Electro-Optics, 1996, p.418 |
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| language | eng |
| recordid | cdi_ieee_primary_864864 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Doping Equations Laser theory Optical amplifiers Optical pulse generation Pulse amplifiers Pulse generation Quantum mechanics Quantum well lasers Stimulated emission |
| title | Characteristics of asymmetric quantum well heterostructure lasers and amplifiers |
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