A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region
Continuous models are developed that go beyond the gradual channel approximation and extend MOSFET {I} - {V} characteristics into the velocity saturation region with finite output conductance. Both the {n} = {1} and {n} = {2} models have been employed. It is shown that the standard relation of...
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| Veröffentlicht in: | IEEE transactions on electron devices 2019-03, Vol.66 (3), p.1160-1166 |
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| container_title | IEEE transactions on electron devices |
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| creator | Taur, Yuan Choi, Woojin Zhang, Jianing Su, Meihua |
| description | Continuous models are developed that go beyond the gradual channel approximation and extend MOSFET {I} - {V} characteristics into the velocity saturation region with finite output conductance. Both the {n} = {1} and {n} = {2} models have been employed. It is shown that the standard relation of channel length modulation for constant mobility must be modified for velocity saturation because the drain current is not simply inversely proportional to the channel length. Regional approximations are applied to derive the explicit expressions for the output conductance in the velocity saturation region in terms of basic device parameters. |
| doi_str_mv | 10.1109/TED.2019.2894685 |
| format | Article |
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Regional approximations are applied to derive the explicit expressions for the output conductance in the velocity saturation region in terms of basic device parameters.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2019.2894685</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Electric potential ; Indexes ; Mathematical model ; Modulation ; MOSFET ; MOSFET model ; MOSFETs ; Resistance ; Saturation ; Semiconductor device modeling ; Velocity ; velocity saturation</subject><ispartof>IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1160-1166</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-7a51e92201da2c1cac8f6b338a3c70798ac6fb76f656c61144a213c1d5f590a23</citedby><cites>FETCH-LOGICAL-c291t-7a51e92201da2c1cac8f6b338a3c70798ac6fb76f656c61144a213c1d5f590a23</cites><orcidid>0000-0002-1101-3902 ; 0000-0002-7273-3110</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8637038$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8637038$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Taur, Yuan</creatorcontrib><creatorcontrib>Choi, Woojin</creatorcontrib><creatorcontrib>Zhang, Jianing</creatorcontrib><creatorcontrib>Su, Meihua</creatorcontrib><title>A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[Continuous models are developed that go beyond the gradual channel approximation and extend MOSFET <inline-formula> <tex-math notation="LaTeX">{I} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> characteristics into the velocity saturation region with finite output conductance. Both the <inline-formula> <tex-math notation="LaTeX">{n} = {1} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{n} = {2} </tex-math></inline-formula> models have been employed. It is shown that the standard relation of channel length modulation for constant mobility must be modified for velocity saturation because the drain current is not simply inversely proportional to the channel length. Regional approximations are applied to derive the explicit expressions for the output conductance in the velocity saturation region in terms of basic device parameters.]]></description><subject>Electric potential</subject><subject>Indexes</subject><subject>Mathematical model</subject><subject>Modulation</subject><subject>MOSFET</subject><subject>MOSFET model</subject><subject>MOSFETs</subject><subject>Resistance</subject><subject>Saturation</subject><subject>Semiconductor device modeling</subject><subject>Velocity</subject><subject>velocity saturation</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEQxYMoWKt3wUvA89ZMsskmx7L9EloLtnoNaZrVLXVTs9lD_3tTWrzMY-C9N8MPoUcgAwCiXtbj0YASUAMqVS4kv0I94LzIlMjFNeoRAjJTTLJbdNe2u7SKPKc9NBviN99k03KIR1O8WK4m4zVe-K3b49I3sW4637W4bqLH8dvhT7f3to5HvDKxCybWvsHv7ivJPbqpzL51Dxfto49UVc6y-XL6Wg7nmaUKYlYYDk7R9OnWUAvWWFmJDWPSMFuQQkljRbUpRCW4sAIgzw0FZmHLK66IoayPns-9h-B_O9dGvfNdaNJJTUHyglGWRh-Rs8sG37bBVfoQ6h8TjhqIPvHSiZc-8dIXXinydI7Uzrl_uxSsIAnbHzAgY8M</recordid><startdate>20190301</startdate><enddate>20190301</enddate><creator>Taur, Yuan</creator><creator>Choi, Woojin</creator><creator>Zhang, Jianing</creator><creator>Su, Meihua</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-1101-3902</orcidid><orcidid>https://orcid.org/0000-0002-7273-3110</orcidid></search><sort><creationdate>20190301</creationdate><title>A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region</title><author>Taur, Yuan ; Choi, Woojin ; Zhang, Jianing ; Su, Meihua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-7a51e92201da2c1cac8f6b338a3c70798ac6fb76f656c61144a213c1d5f590a23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Electric potential</topic><topic>Indexes</topic><topic>Mathematical model</topic><topic>Modulation</topic><topic>MOSFET</topic><topic>MOSFET model</topic><topic>MOSFETs</topic><topic>Resistance</topic><topic>Saturation</topic><topic>Semiconductor device modeling</topic><topic>Velocity</topic><topic>velocity saturation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Taur, Yuan</creatorcontrib><creatorcontrib>Choi, Woojin</creatorcontrib><creatorcontrib>Zhang, Jianing</creatorcontrib><creatorcontrib>Su, Meihua</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taur, Yuan</au><au>Choi, Woojin</au><au>Zhang, Jianing</au><au>Su, Meihua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2019-03-01</date><risdate>2019</risdate><volume>66</volume><issue>3</issue><spage>1160</spage><epage>1166</epage><pages>1160-1166</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[Continuous models are developed that go beyond the gradual channel approximation and extend MOSFET <inline-formula> <tex-math notation="LaTeX">{I} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> characteristics into the velocity saturation region with finite output conductance. 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| source | IEEE Electronic Library (IEL) |
| subjects | Electric potential Indexes Mathematical model Modulation MOSFET MOSFET model MOSFETs Resistance Saturation Semiconductor device modeling Velocity velocity saturation |
| title | A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region |
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