A Survey on Switching Oscillations in Power Converters

High-frequency power converters enabled by wide bandgap (WBG) and silicon semiconductor devices offer distinct advantages in power density and dynamic performance. However, switching oscillations are commonly observed in these circuits with undesirable consequences. This paper reviews the impacts, r...

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Veröffentlicht in:	IEEE journal of emerging and selected topics in power electronics 2020-03, Vol.8 (1), p.893-908
Hauptverfasser:	Liu, Tianjiao, Wong, Thomas T. Y., Shen, Z. John
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Electromagnetic interference Electronic devices Gallium nitrides High electron mobility transistors High frequency Inductance Insulated gate bipolar transistors Literature reviews MOSFET MOSFETs Oscillators parasitic inductance Parasitics (electronics) power converter Power converters power device Root cause analysis Semiconductor devices Silicon Silicon carbide Switches Switching switching oscillation Undamped oscillations wide bandgap (WBG) semiconductor
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