A global finite difference time domain analysis of a silicon nonlinear transmission line

This paper presents a global finite difference time domain (FDTD) analysis of a silicon nonlinear transmission line (NLTL) using optimized varactors. The simulation is based on the FDTD method also including transmission line losses and the drift-diffusion model for the semiconductor devices solved...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Thiel, W., Birk, M., Menzel, W., Abele, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit simulation Distributed parameter circuits Finite difference methods Impedance Propagation losses Semiconductor diodes Semiconductor process modeling Silicon Time domain analysis Transmission lines
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