Monolayer MoS2 Strained to 1.3% With a Microelectromechanical System

We report on a modified transfer technique for atomically thin materials integrated into microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and fragility of MEMS while still providing precise positioning...

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Veröffentlicht in:Journal of microelectromechanical systems 2019-04, Vol.28 (2), p.254-263
Hauptverfasser: Christopher, Jason W., Vutukuru, Mounika, Lloyd, David, Bunch, J. Scott, Goldberg, Bennett B., Bishop, David J., Swan, Anna K.
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Sprache:eng
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