Mechanisms of Electron-Induced Single-Event Latchup

In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials...

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Veröffentlicht in:	IEEE transactions on nuclear science 2019-01, Vol.66 (1), p.437-443
Hauptverfasser:	Tali, Maris, Alia, Ruben Garcia, Brugger, Markus, Ferlet-Cavrois, Veronique, Corsini, Roberto, Farabolini, Wilfrid, Javanainen, Arto, Santin, Giovanni, Boatella Polo, Cesar, Virtanen, Ari
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrons Energy transfer Linear energy transfer (LET) Memory devices Memory management Photonics Protons Radiation Radiation effects Random access memory Silicon Static random access memory static random access memory (SRAM) Testing
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