Mechanisms of Electron-Induced Single-Event Latchup
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2019-01, Vol.66 (1), p.437-443 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Tali, Maris Alia, Ruben Garcia Brugger, Markus Ferlet-Cavrois, Veronique Corsini, Roberto Farabolini, Wilfrid Javanainen, Arto Santin, Giovanni Boatella Polo, Cesar Virtanen, Ari |
| description | In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed. |
| doi_str_mv | 10.1109/TNS.2018.2884537 |
| format | Article |
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The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. 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| subjects | Electrons Energy transfer Linear energy transfer (LET) Memory devices Memory management Photonics Protons Radiation Radiation effects Random access memory Silicon Static random access memory static random access memory (SRAM) Testing |
| title | Mechanisms of Electron-Induced Single-Event Latchup |
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