Area and Energy Efficient Series Multilevel Cell STT-MRAMs for Optimized Read-Write Operations

With the inception of perpendicular magnetic anisotropy-based magnetic tunnel junction (PMTJ) devices, spin-transfer torque (STT) magnetic random access memory (MRAM) is considered as a promising candidate for low power high-density embedded memory applications. However, the single-level cell STT-MR...

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