Copper contamination induced degradation of MOSFET characteristics and reliability

Copper contamination induced degradation of MOSFET characteristics and reliability

MOSFET electrical characteristics and reliability impact with copper contamination is examined and some degradation modes are inspected. The mechanism of degradation is explained by increase of carrier trap sites in gate silicon oxide. The permissive contamination level of copper in device region is...

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Bibliographische Detailangaben
Hauptverfasser: Inohara, M., Sakurai, H., Yamaguchi, T., Tomita, H., Iijima, T., Oyamatsu, H., Nakayama, T., Yoshimura, H., Toyoshima, Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic measurements
Capacitors
Contamination
Copper
Degradation
Materials reliability
MOSFET circuits
Pollution measurement
Silicon
Substrates
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Beschreibung
Zusammenfassung:MOSFET electrical characteristics and reliability impact with copper contamination is examined and some degradation modes are inspected. The mechanism of degradation is explained by increase of carrier trap sites in gate silicon oxide. The permissive contamination level of copper in device region is indicated by comparison between two different contamination level samples.
DOI:10.1109/VLSIT.2000.852755