An SOI Photodetector With Field-Induced Embedded Diode Showing High Responsivity and Tunable Response Spectrum by Backgate

In this paper, we demonstrate experimentally a photodetector based on silicon-on-insulator substrate. The photosensing diode is formed in the substrate induced by the backgate bias instead of doping. TCAD simulation is conducted to confirm that the field-induced junction performs similarly as the do...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-12, Vol.65 (12), p.5412-5418
Hauptverfasser:	Cao, X.-Y., Lin, W.-S., Liu, H.-B., Deng, J.-N., Arsalan, M., Zhu, K.-M., Chen, Y.-F., Wan, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Field-induced diode gate-tunable response spectrum Implantation Luminous intensity MOSFET MOSFETs P-n junctions photodetector Photodiodes Photometers Semiconductor process modeling Silicon silicon on insulator (SOI) Silicon substrates Silicon-on-insulator Simulation SOI (semiconductors) Substrates Threshold voltage
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