Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification

The effects of chamber pressure ( {P}_{\text {C}} ) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing {P}_{\text {C}} , which were explained based on the enhanced kinetic energy o...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-11, Vol.65 (11), p.4854-4860
Hauptverfasser:	Kim, Hyeon-A., Kim, Jeong Oh, Hur, Jae Seok, Son, Kyoung-Seok, Lim, Jun Hyung, Cho, Johann, Jeong, Jae Kyeong
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Chemical properties Densification Gallium indium gallium tin oxide (IGTO) Iron Kinetic energy Logic gates Low temperature mobility Organic chemistry Plasma temperature Pressure effects Semiconductor devices Sputtering Temperature Thin film transistors thin-film transistor (TFT) Threshold voltage Tin oxides
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