Effect of Microwave Annealing on Transparent In-Ga-ZnO Thin-Film Transistors With Graphene Source and Drain Electrodes

In this letter, we investigated the effects of microwave heat treatment on amorphous In-Ga-ZnO (a-IGZO) thin-film transistors (TFTs) with transparent graphene source and drain (S/D) electrodes. Microwave annealing (MWA) was simultaneously applied to post-deposition annealing of the a-IGZO channel la...

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Veröffentlicht in:	IEEE electron device letters 2018-11, Vol.39 (11), p.1664-1667
Hauptverfasser:	Hong, Eun-Ki, Cho, Won-Ju
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous In-Ga-Zn-O (a-IGZO) Annealing Electrodes Electromagnetic heating Graphene microwave annealing Temperature measurement Thermal stability Thin film transistors
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