Crossover From Deterministic to Stochastic Nature of Resistive-Switching Statistics in a Tantalum Oxide Thin Film

We study the voltage dependence of the SET time statistics of bipolar resistive switching in a tantalum oxide thin film. Weibull analysis reveals that the SET time statistics exhibit a crossover from deterministic to stochastic nature in a single cell as the amplitude of the applied voltage is lower...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-10, Vol.65 (10), p.4320-4325
Hauptverfasser:	Nishi, Yoshifumi, Bottger, Ulrich, Waser, Rainer, Menzel, Stephan
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplitudes Bipolar resistive switching Crossovers Electric potential Heating systems High temperature effects nonvolatile memory Ohmic dissipation Positive feedback Pulse measurements Randomness Resistance heating Simulation Statistical analysis Statistics Switches Switching switching statistics Tantalum Tantalum oxides Thin films Time dependence Voltage control Weibull distribution
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