Electrothermal Annealing to Enhance the Electrical Performance of an Exfoliated MoS2 Field-Effect Transistor
An electrothermal annealing (ETA) was applied to improve the ON-state current ( {I} _{ \mathrm{\scriptscriptstyle ON}} ) of an exfoliated MoS 2 field-effect transistor (FET). The ETA uses localized Joule heat generated by current flowing through the source and drain of the device. Process-induced co...
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| Veröffentlicht in: | IEEE electron device letters 2018-10, Vol.39 (10), p.1532-1535 |
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| container_title | IEEE electron device letters |
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| creator | Han, Joon-Kyu Park, Jun-Young Kim, Choong-Ki Kwon, Jeong Hyun Kim, Myeong-Soo Hwang, Byeong-Woon Kim, Da-Jin Choi, Kyung Cheol Choi, Yang-Kyu |
| description | An electrothermal annealing (ETA) was applied to improve the ON-state current ( {I} _{ \mathrm{\scriptscriptstyle ON}} ) of an exfoliated MoS 2 field-effect transistor (FET). The ETA uses localized Joule heat generated by current flowing through the source and drain of the device. Process-induced contaminants in both the MoS 2 channel and MoS 2 -metal junctions were reduced. Electrical characterization, including the extraction of mobility and parasitic resistance, was performed to analyze the annealing effects. Numerical thermal simulations were also performed to provide insight on parameters to optimize the ETA process since the MoS 2 flakes have diverse sizes and asymmetric shapes in the exfoliation-based MoS 2 FETs. |
| doi_str_mv | 10.1109/LED.2018.2867569 |
| format | Article |
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The ETA uses localized Joule heat generated by current flowing through the source and drain of the device. Process-induced contaminants in both the MoS 2 channel and MoS 2 -metal junctions were reduced. Electrical characterization, including the extraction of mobility and parasitic resistance, was performed to analyze the annealing effects. Numerical thermal simulations were also performed to provide insight on parameters to optimize the ETA process since the MoS 2 flakes have diverse sizes and asymmetric shapes in the exfoliation-based MoS 2 FETs.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2018.2867569</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Annealing ; Computer simulation ; Contact resistance ; Contaminants ; contamination ; Electrical junctions ; Electrical properties ; electrothermal annealing ; Exfoliation ; Field effect transistors ; Heating systems ; Joule heat ; Junctions ; Logic gates ; Molybdenum ; Molybdenum disulfide ; MoS₂FET ; Semiconductor devices ; Sulfur ; Transistors</subject><ispartof>IEEE electron device letters, 2018-10, Vol.39 (10), p.1532-1535</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-e71a4d84d332ece2e4630bf1303d562aaa1dde76b3fa8cc8067faab40c20e59e3</citedby><cites>FETCH-LOGICAL-c291t-e71a4d84d332ece2e4630bf1303d562aaa1dde76b3fa8cc8067faab40c20e59e3</cites><orcidid>0000-0002-0734-6042 ; 0000-0001-6483-9516 ; 0000-0002-8736-9091 ; 0000-0002-3975-3435</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8450015$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8450015$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Han, Joon-Kyu</creatorcontrib><creatorcontrib>Park, Jun-Young</creatorcontrib><creatorcontrib>Kim, Choong-Ki</creatorcontrib><creatorcontrib>Kwon, Jeong Hyun</creatorcontrib><creatorcontrib>Kim, Myeong-Soo</creatorcontrib><creatorcontrib>Hwang, Byeong-Woon</creatorcontrib><creatorcontrib>Kim, Da-Jin</creatorcontrib><creatorcontrib>Choi, Kyung Cheol</creatorcontrib><creatorcontrib>Choi, Yang-Kyu</creatorcontrib><title>Electrothermal Annealing to Enhance the Electrical Performance of an Exfoliated MoS2 Field-Effect Transistor</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>An electrothermal annealing (ETA) was applied to improve the ON-state current (<inline-formula> <tex-math notation="LaTeX">{I} _{ \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula>) of an exfoliated MoS 2 field-effect transistor (FET). The ETA uses localized Joule heat generated by current flowing through the source and drain of the device. Process-induced contaminants in both the MoS 2 channel and MoS 2 -metal junctions were reduced. Electrical characterization, including the extraction of mobility and parasitic resistance, was performed to analyze the annealing effects. Numerical thermal simulations were also performed to provide insight on parameters to optimize the ETA process since the MoS 2 flakes have diverse sizes and asymmetric shapes in the exfoliation-based MoS 2 FETs.</description><subject>Annealing</subject><subject>Computer simulation</subject><subject>Contact resistance</subject><subject>Contaminants</subject><subject>contamination</subject><subject>Electrical junctions</subject><subject>Electrical properties</subject><subject>electrothermal annealing</subject><subject>Exfoliation</subject><subject>Field effect transistors</subject><subject>Heating systems</subject><subject>Joule heat</subject><subject>Junctions</subject><subject>Logic gates</subject><subject>Molybdenum</subject><subject>Molybdenum disulfide</subject><subject>MoS₂FET</subject><subject>Semiconductor devices</subject><subject>Sulfur</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AURQdRsFb3gpsB16nz5jNdlpqqUFGwrsN08sampJk6SUH_vVNSXL3FPfc-OITcApsAsOnDsniccAb5hOfaKD09IyNQKs-Y0uKcjJiRkAlg-pJcdd2WMZDSyBFpigZdH0O_wbizDZ21Ldqmbr9oH2jRbmzrkKaQDlztEvOO0YdEH6PgqW1p8eNDU9seK_oaPjhd1NhUWeF96tBVtG1Xd32I1-TC26bDm9Mdk89FsZo_Z8u3p5f5bJk5PoU-QwNWVrmshODokKPUgq09CCYqpbm1FqoKjV4Lb3PncqaNt3YtmeMM1RTFmNwPu_sYvg_Y9eU2HGKbXpYcwIAxhkOi2EC5GLouoi_3sd7Z-FsCK49Oy-S0PDotT05T5W6o1Ij4j-dSJZ9K_AFTJXNV</recordid><startdate>20181001</startdate><enddate>20181001</enddate><creator>Han, Joon-Kyu</creator><creator>Park, Jun-Young</creator><creator>Kim, Choong-Ki</creator><creator>Kwon, Jeong Hyun</creator><creator>Kim, Myeong-Soo</creator><creator>Hwang, Byeong-Woon</creator><creator>Kim, Da-Jin</creator><creator>Choi, Kyung Cheol</creator><creator>Choi, Yang-Kyu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The ETA uses localized Joule heat generated by current flowing through the source and drain of the device. Process-induced contaminants in both the MoS 2 channel and MoS 2 -metal junctions were reduced. Electrical characterization, including the extraction of mobility and parasitic resistance, was performed to analyze the annealing effects. Numerical thermal simulations were also performed to provide insight on parameters to optimize the ETA process since the MoS 2 flakes have diverse sizes and asymmetric shapes in the exfoliation-based MoS 2 FETs.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2018.2867569</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-0734-6042</orcidid><orcidid>https://orcid.org/0000-0001-6483-9516</orcidid><orcidid>https://orcid.org/0000-0002-8736-9091</orcidid><orcidid>https://orcid.org/0000-0002-3975-3435</orcidid></addata></record> |
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| subjects | Annealing Computer simulation Contact resistance Contaminants contamination Electrical junctions Electrical properties electrothermal annealing Exfoliation Field effect transistors Heating systems Joule heat Junctions Logic gates Molybdenum Molybdenum disulfide MoS₂FET Semiconductor devices Sulfur Transistors |
| title | Electrothermal Annealing to Enhance the Electrical Performance of an Exfoliated MoS2 Field-Effect Transistor |
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