Low loss finite width ground plane, thin film microstrip lines on Si wafers
Si RFICs on standard, 2 /spl Omega/-cm Si wafers require novel transmission lines to reduce the loss caused by the resistive substrate. One such transmission line is commonly called thin film microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the m...
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| creator | Ponchak, G.E. Margomenos, A. Katehi, P.B. |
| description | Si RFICs on standard, 2 /spl Omega/-cm Si wafers require novel transmission lines to reduce the loss caused by the resistive substrate. One such transmission line is commonly called thin film microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the microstrip lines on the Si wafer. Thus, the electric fields are isolated from the Si wafer. In this paper, it is shown through experimental results that the ground plane of TFMS may be finite width and comparable to the strip width in size while still achieving low loss on 2 /spl Omega/-cm Si. Measured effective permittivity shows that the field interaction with the Si wafer is small. |
| doi_str_mv | 10.1109/SMIC.2000.844294 |
| format | Conference Proceeding |
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One such transmission line is commonly called thin film microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the microstrip lines on the Si wafer. Thus, the electric fields are isolated from the Si wafer. In this paper, it is shown through experimental results that the ground plane of TFMS may be finite width and comparable to the strip width in size while still achieving low loss on 2 /spl Omega/-cm Si. Measured effective permittivity shows that the field interaction with the Si wafer is small.</description><identifier>ISBN: 0780362551</identifier><identifier>ISBN: 9780780362550</identifier><identifier>DOI: 10.1109/SMIC.2000.844294</identifier><language>eng</language><publisher>IEEE</publisher><subject>Insulation ; Microstrip ; Propagation losses ; Radiofrequency integrated circuits ; Semiconductor thin films ; Sputtering ; Strips ; Substrates ; Transistors ; Transmission lines</subject><ispartof>2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. 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Measured effective permittivity shows that the field interaction with the Si wafer is small.</description><subject>Insulation</subject><subject>Microstrip</subject><subject>Propagation losses</subject><subject>Radiofrequency integrated circuits</subject><subject>Semiconductor thin films</subject><subject>Sputtering</subject><subject>Strips</subject><subject>Substrates</subject><subject>Transistors</subject><subject>Transmission lines</subject><isbn>0780362551</isbn><isbn>9780780362550</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81KxDAYRQMiqOPsxVUewNYvv5NZSvFnsOJidD2k7Rcn0iYlqRTf3sK4OnAPXDiE3DAoGYPt_f5tV5UcAEojJd_KM3IFGwNCc6XYBVnn_L1IUMoYYJfktY4z7WPO1PngJ6Sz76Yj_UrxJ3R07G3AOzodfVh8P9DBtynmKfmR9j5gpjHQvaezdZjyNTl3ts-4_ueKfD49flQvRf3-vKse6sJzpqfCYsPBacMNb6QRxoLmnezQghCt0bpjiguDy9hKxaSQjjllWqf0hjXYWLEit6dfj4iHMfnBpt_DKVf8AcwfSrI</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Ponchak, G.E.</creator><creator>Margomenos, A.</creator><creator>Katehi, P.B.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>Low loss finite width ground plane, thin film microstrip lines on Si wafers</title><author>Ponchak, G.E. ; Margomenos, A. ; Katehi, P.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i216t-aeb20f68282b4838a062d4dea033c866d15238e62dc451434f1f58cf5671beba3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Insulation</topic><topic>Microstrip</topic><topic>Propagation losses</topic><topic>Radiofrequency integrated circuits</topic><topic>Semiconductor thin films</topic><topic>Sputtering</topic><topic>Strips</topic><topic>Substrates</topic><topic>Transistors</topic><topic>Transmission lines</topic><toplevel>online_resources</toplevel><creatorcontrib>Ponchak, G.E.</creatorcontrib><creatorcontrib>Margomenos, A.</creatorcontrib><creatorcontrib>Katehi, P.B.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ponchak, G.E.</au><au>Margomenos, A.</au><au>Katehi, P.B.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low loss finite width ground plane, thin film microstrip lines on Si wafers</atitle><btitle>2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397)</btitle><stitle>SMIC</stitle><date>2000</date><risdate>2000</risdate><spage>43</spage><epage>47</epage><pages>43-47</pages><isbn>0780362551</isbn><isbn>9780780362550</isbn><abstract>Si RFICs on standard, 2 /spl Omega/-cm Si wafers require novel transmission lines to reduce the loss caused by the resistive substrate. One such transmission line is commonly called thin film microstrip (TFMS), which is created by depositing a metallic ground plane, thin insulating layers, and the microstrip lines on the Si wafer. Thus, the electric fields are isolated from the Si wafer. In this paper, it is shown through experimental results that the ground plane of TFMS may be finite width and comparable to the strip width in size while still achieving low loss on 2 /spl Omega/-cm Si. Measured effective permittivity shows that the field interaction with the Si wafer is small.</abstract><pub>IEEE</pub><doi>10.1109/SMIC.2000.844294</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISBN: 0780362551 |
| ispartof | 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397), 2000, p.43-47 |
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| language | eng |
| recordid | cdi_ieee_primary_844294 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Insulation Microstrip Propagation losses Radiofrequency integrated circuits Semiconductor thin films Sputtering Strips Substrates Transistors Transmission lines |
| title | Low loss finite width ground plane, thin film microstrip lines on Si wafers |
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