Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-09, Vol.65 (9), p.3786-3790
Hauptverfasser:	Nguyen, Manh-Cuong, Nguyen, An Hoang Thuy, Ji, Hyungmin, Cheon, Jonggyu, Kim, Jin-Hyun, Yu, Kyoung-Moon, Cho, Seong-Yong, Kim, Sang-Woo, Choi, Rino
Format:	Artikel
Sprache:	eng
Schlagworte:	Band tail charge pumping (CP) conduction band edge Conduction bands Current measurement Density of states density of states (DOSs) Dielectrics Electron traps Gallium Indium Indium gallium zinc oxide indium gallium zinc oxide (IGZO) Logic gates metal–oxide (MO)–semiconductor MOSFET oxygen vacancy Pumping Resistance Semiconductor devices single pulse Thin film transistors thin-film transistor (TFT) Transistors trap density trap profiling Zinc oxide Zinc oxides
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