Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors
A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide...
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| Veröffentlicht in: | IEEE transactions on electron devices 2018-09, Vol.65 (9), p.3786-3790 |
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| container_end_page | 3790 |
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| container_issue | 9 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 65 |
| creator | Nguyen, Manh-Cuong Nguyen, An Hoang Thuy Ji, Hyungmin Cheon, Jonggyu Kim, Jin-Hyun Yu, Kyoung-Moon Cho, Seong-Yong Kim, Sang-Woo Choi, Rino |
| description | A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization. |
| doi_str_mv | 10.1109/TED.2018.2859224 |
| format | Article |
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The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2018.2859224</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Band tail ; charge pumping (CP) ; conduction band edge ; Conduction bands ; Current measurement ; Density of states ; density of states (DOSs) ; Dielectrics ; Electron traps ; Gallium ; Indium ; Indium gallium zinc oxide ; indium gallium zinc oxide (IGZO) ; Logic gates ; metal–oxide (MO)–semiconductor ; MOSFET ; oxygen vacancy ; Pumping ; Resistance ; Semiconductor devices ; single pulse ; Thin film transistors ; thin-film transistor (TFT) ; Transistors ; trap density ; trap profiling ; Zinc oxide ; Zinc oxides</subject><ispartof>IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3786-3790</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-c50ea3e32493de8460fd1aa136ec8882b7390959f2824e41b7a1849e3742b72f3</citedby><cites>FETCH-LOGICAL-c291t-c50ea3e32493de8460fd1aa136ec8882b7390959f2824e41b7a1849e3742b72f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8424088$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8424088$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nguyen, Manh-Cuong</creatorcontrib><creatorcontrib>Nguyen, An Hoang Thuy</creatorcontrib><creatorcontrib>Ji, Hyungmin</creatorcontrib><creatorcontrib>Cheon, Jonggyu</creatorcontrib><creatorcontrib>Kim, Jin-Hyun</creatorcontrib><creatorcontrib>Yu, Kyoung-Moon</creatorcontrib><creatorcontrib>Cho, Seong-Yong</creatorcontrib><creatorcontrib>Kim, Sang-Woo</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><title>Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.</description><subject>Band tail</subject><subject>charge pumping (CP)</subject><subject>conduction band edge</subject><subject>Conduction bands</subject><subject>Current measurement</subject><subject>Density of states</subject><subject>density of states (DOSs)</subject><subject>Dielectrics</subject><subject>Electron traps</subject><subject>Gallium</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>indium gallium zinc oxide (IGZO)</subject><subject>Logic gates</subject><subject>metal–oxide (MO)–semiconductor</subject><subject>MOSFET</subject><subject>oxygen vacancy</subject><subject>Pumping</subject><subject>Resistance</subject><subject>Semiconductor devices</subject><subject>single pulse</subject><subject>Thin film transistors</subject><subject>thin-film transistor (TFT)</subject><subject>Transistors</subject><subject>trap density</subject><subject>trap profiling</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM9LwzAUx4MoOKd3wUvAc2d-tU2OY25zMNnAevESsvZ1y-jamrSi_70ZGzs93vv-ePBB6JGSEaVEvWTT1xEjVI6YjBVj4goNaBynkUpEco0GJEiR4pLfojvv92FNhGAD5MZtW9ncdLapcVPiD1tvK4jWfeUBT3bGbQGv-0Mbzvgdul1T4GCc_piqv2QWdWH7A56bqjrOL1vnePVrC8DZztbRzFYHnDlTe-u7xvl7dFOaUP9wnkP0OZtmk7douZovJuNllDNFuyiPCRgOnAnFC5AiIWVBjaE8gVxKyTYpV0TFqmSSCRB0kxoqhQKeiqCxkg_R86m3dc13D77T-6Z3dXipGaUp5YomSXCRkyt3jfcOSt06ezDuT1Oij2R1IKuPZPWZbIg8nSIWAC52KZggUvJ_ks90Cw</recordid><startdate>20180901</startdate><enddate>20180901</enddate><creator>Nguyen, Manh-Cuong</creator><creator>Nguyen, An Hoang Thuy</creator><creator>Ji, Hyungmin</creator><creator>Cheon, Jonggyu</creator><creator>Kim, Jin-Hyun</creator><creator>Yu, Kyoung-Moon</creator><creator>Cho, Seong-Yong</creator><creator>Kim, Sang-Woo</creator><creator>Choi, Rino</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20180901</creationdate><title>Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors</title><author>Nguyen, Manh-Cuong ; Nguyen, An Hoang Thuy ; Ji, Hyungmin ; Cheon, Jonggyu ; Kim, Jin-Hyun ; Yu, Kyoung-Moon ; Cho, Seong-Yong ; Kim, Sang-Woo ; Choi, Rino</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-c50ea3e32493de8460fd1aa136ec8882b7390959f2824e41b7a1849e3742b72f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Band tail</topic><topic>charge pumping (CP)</topic><topic>conduction band edge</topic><topic>Conduction bands</topic><topic>Current measurement</topic><topic>Density of states</topic><topic>density of states (DOSs)</topic><topic>Dielectrics</topic><topic>Electron traps</topic><topic>Gallium</topic><topic>Indium</topic><topic>Indium gallium zinc oxide</topic><topic>indium gallium zinc oxide (IGZO)</topic><topic>Logic gates</topic><topic>metal–oxide (MO)–semiconductor</topic><topic>MOSFET</topic><topic>oxygen vacancy</topic><topic>Pumping</topic><topic>Resistance</topic><topic>Semiconductor devices</topic><topic>single pulse</topic><topic>Thin film transistors</topic><topic>thin-film transistor (TFT)</topic><topic>Transistors</topic><topic>trap density</topic><topic>trap profiling</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nguyen, Manh-Cuong</creatorcontrib><creatorcontrib>Nguyen, An Hoang Thuy</creatorcontrib><creatorcontrib>Ji, Hyungmin</creatorcontrib><creatorcontrib>Cheon, Jonggyu</creatorcontrib><creatorcontrib>Kim, Jin-Hyun</creatorcontrib><creatorcontrib>Yu, Kyoung-Moon</creatorcontrib><creatorcontrib>Cho, Seong-Yong</creatorcontrib><creatorcontrib>Kim, Sang-Woo</creatorcontrib><creatorcontrib>Choi, Rino</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nguyen, Manh-Cuong</au><au>Nguyen, An Hoang Thuy</au><au>Ji, Hyungmin</au><au>Cheon, Jonggyu</au><au>Kim, Jin-Hyun</au><au>Yu, Kyoung-Moon</au><au>Cho, Seong-Yong</au><au>Kim, Sang-Woo</au><au>Choi, Rino</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2018-09-01</date><risdate>2018</risdate><volume>65</volume><issue>9</issue><spage>3786</spage><epage>3790</epage><pages>3786-3790</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2018.2859224</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0018-9383 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Band tail charge pumping (CP) conduction band edge Conduction bands Current measurement Density of states density of states (DOSs) Dielectrics Electron traps Gallium Indium Indium gallium zinc oxide indium gallium zinc oxide (IGZO) Logic gates metal–oxide (MO)–semiconductor MOSFET oxygen vacancy Pumping Resistance Semiconductor devices single pulse Thin film transistors thin-film transistor (TFT) Transistors trap density trap profiling Zinc oxide Zinc oxides |
| title | Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors |
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