LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System

Selective laser annealing system was developed to realize fabrications of low-temperature poly-Si thin-film transistors (TFTs) even for large substrate, while the conventional excimer laser annealing system has the limitation in substrate size due to the difficulty in obtaining uniform beam line. In...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2018-08, Vol.65 (8), p.3250-3256
Hauptverfasser:	Goto, Tetsuya, Saito, Kaori, Imaizumi, Fuminobu, Hatanaka, Makoto, Takimoto, Masami, Mizumura, Michinobu, Gotoh, Jun, Ikenoue, Hiroshi, Sugawa, Shigetoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Electrical properties Excimer laser annealing (ELA) Excimer lasers Excimers Exposure Flux density Grain structure Image edge detection Laser beam annealing Laser beams Lasers lateral solidification low-temperature poly-Si (LTPS) Rapid prototyping selective laser annealing (SLA) Semiconductor devices Silicon Solidification Substrates Thin film transistors thin-film transistor (TFT) Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!