Deep UV Lithography Process in Generic InP Integration for Arrayed Waveguide Gratings

Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the crit...

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Veröffentlicht in:IEEE photonics technology letters 2018-07, Vol.30 (13), p.1222-1225, Article 1222
Hauptverfasser: Bolk, J., Ambrosius, H., Stabile, R., Latkowski, S., Leijtens, X., Bitincka, E., Augustin, L., Marsan, D., Darracq, J., Williams, K.
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container_end_page 1225
container_issue 13
container_start_page 1222
container_title IEEE photonics technology letters
container_volume 30
creator Bolk, J.
Ambrosius, H.
Stabile, R.
Latkowski, S.
Leijtens, X.
Bitincka, E.
Augustin, L.
Marsan, D.
Darracq, J.
Williams, K.
description Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.
doi_str_mv 10.1109/LPT.2018.2840224
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subjects Arrayed waveguide grating
Arrayed waveguide gratings
III-V semiconductor materials
Indium phosphide
Lithography
photonic integrated circuit
Substrates
Waveguide discontinuities
title Deep UV Lithography Process in Generic InP Integration for Arrayed Waveguide Gratings
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