Deep UV Lithography Process in Generic InP Integration for Arrayed Waveguide Gratings
Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the crit...
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Veröffentlicht in: | IEEE photonics technology letters 2018-07, Vol.30 (13), p.1222-1225, Article 1222 |
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creator | Bolk, J. Ambrosius, H. Stabile, R. Latkowski, S. Leijtens, X. Bitincka, E. Augustin, L. Marsan, D. Darracq, J. Williams, K. |
description | Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements. |
doi_str_mv | 10.1109/LPT.2018.2840224 |
format | Article |
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Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.</description><subject>Arrayed waveguide grating</subject><subject>Arrayed waveguide gratings</subject><subject>III-V semiconductor materials</subject><subject>Indium phosphide</subject><subject>Lithography</subject><subject>photonic integrated circuit</subject><subject>Substrates</subject><subject>Waveguide discontinuities</subject><issn>1041-1135</issn><issn>1941-0174</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kE1LAzEQhoMoWKt3wUv-wNaZfOzHsVSthQV7aPW4pLuTNlJ3S7IK_femtnjw4GGYF2beGd6HsVuEESIU9-V8MRKA-UjkCoRQZ2yAhcIEMFPnUUPUiFJfsqsQ3gFQaakGbPlAtOPLV166ftOtvdlt9nzuu5pC4K7lU2rJu5rP2nmsnuJG77qW287zsfdmTw1_M1-0_nQN8elh2q7DNbuwZhvo5tSHbPn0uJg8J-XLdDYZl0mtMO8TldWSYJUbnZnUrMCCLUwGIuYRoAurqTBSS5tmCm2jU92gAaHJosmFbAo5ZHC8W_suBE-22nn3Yfy-QqgOWKqIpTpgqU5YoiX9Y6ld_5Op98Zt_zPeHY2OiH7_5DJVqVTyG7Mvb0g</recordid><startdate>20180701</startdate><enddate>20180701</enddate><creator>Bolk, J.</creator><creator>Ambrosius, H.</creator><creator>Stabile, R.</creator><creator>Latkowski, S.</creator><creator>Leijtens, X.</creator><creator>Bitincka, E.</creator><creator>Augustin, L.</creator><creator>Marsan, D.</creator><creator>Darracq, J.</creator><creator>Williams, K.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-5197-3150</orcidid><orcidid>https://orcid.org/0000-0003-2526-681X</orcidid><orcidid>https://orcid.org/0000-0003-4464-4097</orcidid><orcidid>https://orcid.org/0000-0002-0260-9800</orcidid></search><sort><creationdate>20180701</creationdate><title>Deep UV Lithography Process in Generic InP Integration for Arrayed Waveguide Gratings</title><author>Bolk, J. ; Ambrosius, H. ; Stabile, R. ; Latkowski, S. ; Leijtens, X. ; Bitincka, E. ; Augustin, L. ; Marsan, D. ; Darracq, J. ; Williams, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c418t-47c3e0b8a57a6ab0f0f9a7021092059f5e9a353f6741fd565d1a025ef1a823d93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Arrayed waveguide grating</topic><topic>Arrayed waveguide gratings</topic><topic>III-V semiconductor materials</topic><topic>Indium phosphide</topic><topic>Lithography</topic><topic>photonic integrated circuit</topic><topic>Substrates</topic><topic>Waveguide discontinuities</topic><toplevel>online_resources</toplevel><creatorcontrib>Bolk, J.</creatorcontrib><creatorcontrib>Ambrosius, H.</creatorcontrib><creatorcontrib>Stabile, R.</creatorcontrib><creatorcontrib>Latkowski, S.</creatorcontrib><creatorcontrib>Leijtens, X.</creatorcontrib><creatorcontrib>Bitincka, E.</creatorcontrib><creatorcontrib>Augustin, L.</creatorcontrib><creatorcontrib>Marsan, D.</creatorcontrib><creatorcontrib>Darracq, J.</creatorcontrib><creatorcontrib>Williams, K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bolk, J.</au><au>Ambrosius, H.</au><au>Stabile, R.</au><au>Latkowski, S.</au><au>Leijtens, X.</au><au>Bitincka, E.</au><au>Augustin, L.</au><au>Marsan, D.</au><au>Darracq, J.</au><au>Williams, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Deep UV Lithography Process in Generic InP Integration for Arrayed Waveguide Gratings</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2018-07-01</date><risdate>2018</risdate><volume>30</volume><issue>13</issue><spage>1222</spage><epage>1225</epage><pages>1222-1225</pages><artnum>1222</artnum><issn>1041-1135</issn><issn>1941-0174</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. 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subjects | Arrayed waveguide grating Arrayed waveguide gratings III-V semiconductor materials Indium phosphide Lithography photonic integrated circuit Substrates Waveguide discontinuities |
title | Deep UV Lithography Process in Generic InP Integration for Arrayed Waveguide Gratings |
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