On the Switching Frequency of Hysteresis Control in a Silicon Carbide Converter Pump-Back Test
The pump-back test is widely adopted in the industry for characterizing and qualifying high-power converters. One popular pump-back test configuration is to tie the dc links of two converters together and circulate the current through the inductor connected between the ac terminals. In this configur...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on industry applications 2018-09, Vol.54 (5), p.4886-4893 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4893 |
|---|---|
| container_issue | 5 |
| container_start_page | 4886 |
| container_title | IEEE transactions on industry applications |
| container_volume | 54 |
| creator | She, Xu Frangieh, Tony Datta, Rajib |
| description | The pump-back test is widely adopted in the industry for characterizing and qualifying high-power converters. One popular pump-back test configuration is to tie the dc links of two converters together and circulate the current through the inductor connected between the ac terminals. In this configuration, one of the converters operates in the voltage mode to generate the virtual grid and the other converter regulates the circulating current, where hysteresis control could be applied. However, the switching characteristics of hysteresis control are unique due to the pulsewidth modulation type voltage being the virtual grid. This paper contributes to analyzing the switching frequency characteristics of the hysteresis control in this pump-back test configuration. The switching frequency tracking phenomenon is revealed and reported in this paper for the first time. Theoretical analysis, simulation validation, and experimental demonstration are provided to support the major conclusions. |
| doi_str_mv | 10.1109/TIA.2018.2840080 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_8364598</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8364598</ieee_id><sourcerecordid>2117169347</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-9322efc1b9c59d50bac06c31a9e45c33e368fd7fcc111d2f4b4747a302d825583</originalsourceid><addsrcrecordid>eNo9kEFPAjEQRhujiYjeTbw08bzYabu77RGJCAkJJuDVptudlSLsYrto-PcugXiaw7xv5ssj5B7YAIDpp-V0OOAM1IAryZhiF6QHWuhEiyy_JD3GtEi01vKa3MS4ZgxkCrJHPuY1bVdIF7--dStff9JxwO891u5Am4pODrHFgNFHOmrqNjQb6mtq6cJvvGtqOrKh8CUelz8YOpS-7be75Nm6L7rE2N6Sq8puIt6dZ5-8j1-Wo0kym79OR8NZ4riGtivJOVYOCu1SXaassI5lToDVKFMnBIpMVWVeOQcAJa9kIXOZW8F4qXiaKtEnj6e7u9B07WNr1s0-1N1LwwFyyLSQeUexE-VCE2PAyuyC39pwMMDM0aLpLJqjRXO22EUeThGPiP-4EplMtRJ_hbdtNg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2117169347</pqid></control><display><type>article</type><title>On the Switching Frequency of Hysteresis Control in a Silicon Carbide Converter Pump-Back Test</title><source>IEEE Electronic Library (IEL)</source><creator>She, Xu ; Frangieh, Tony ; Datta, Rajib</creator><creatorcontrib>She, Xu ; Frangieh, Tony ; Datta, Rajib</creatorcontrib><description>The pump-back test is widely adopted in the industry for characterizing and qualifying high-power converters. One popular pump-back test configuration is to tie the dc links of two converters together and circulate the current through the inductor connected between the ac terminals. In this configuration, one of the converters operates in the voltage mode to generate the virtual grid and the other converter regulates the circulating current, where hysteresis control could be applied. However, the switching characteristics of hysteresis control are unique due to the pulsewidth modulation type voltage being the virtual grid. This paper contributes to analyzing the switching frequency characteristics of the hysteresis control in this pump-back test configuration. The switching frequency tracking phenomenon is revealed and reported in this paper for the first time. Theoretical analysis, simulation validation, and experimental demonstration are provided to support the major conclusions.</description><identifier>ISSN: 0093-9994</identifier><identifier>EISSN: 1939-9367</identifier><identifier>DOI: 10.1109/TIA.2018.2840080</identifier><identifier>CODEN: ITIACR</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Configurations ; Converter testing ; Electric potential ; Electronics ; high-power converter ; Hysteresis ; hysteresis control ; Inductors ; Power converters ; pump-back test ; Silicon carbide ; silicon carbide (SiC) converter ; Switches ; Switching ; Switching frequency ; Voltage control</subject><ispartof>IEEE transactions on industry applications, 2018-09, Vol.54 (5), p.4886-4893</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-9322efc1b9c59d50bac06c31a9e45c33e368fd7fcc111d2f4b4747a302d825583</citedby><cites>FETCH-LOGICAL-c291t-9322efc1b9c59d50bac06c31a9e45c33e368fd7fcc111d2f4b4747a302d825583</cites><orcidid>0000-0002-2567-7179</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8364598$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8364598$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>She, Xu</creatorcontrib><creatorcontrib>Frangieh, Tony</creatorcontrib><creatorcontrib>Datta, Rajib</creatorcontrib><title>On the Switching Frequency of Hysteresis Control in a Silicon Carbide Converter Pump-Back Test</title><title>IEEE transactions on industry applications</title><addtitle>TIA</addtitle><description>The pump-back test is widely adopted in the industry for characterizing and qualifying high-power converters. One popular pump-back test configuration is to tie the dc links of two converters together and circulate the current through the inductor connected between the ac terminals. In this configuration, one of the converters operates in the voltage mode to generate the virtual grid and the other converter regulates the circulating current, where hysteresis control could be applied. However, the switching characteristics of hysteresis control are unique due to the pulsewidth modulation type voltage being the virtual grid. This paper contributes to analyzing the switching frequency characteristics of the hysteresis control in this pump-back test configuration. The switching frequency tracking phenomenon is revealed and reported in this paper for the first time. Theoretical analysis, simulation validation, and experimental demonstration are provided to support the major conclusions.</description><subject>Configurations</subject><subject>Converter testing</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>high-power converter</subject><subject>Hysteresis</subject><subject>hysteresis control</subject><subject>Inductors</subject><subject>Power converters</subject><subject>pump-back test</subject><subject>Silicon carbide</subject><subject>silicon carbide (SiC) converter</subject><subject>Switches</subject><subject>Switching</subject><subject>Switching frequency</subject><subject>Voltage control</subject><issn>0093-9994</issn><issn>1939-9367</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPAjEQRhujiYjeTbw08bzYabu77RGJCAkJJuDVptudlSLsYrto-PcugXiaw7xv5ssj5B7YAIDpp-V0OOAM1IAryZhiF6QHWuhEiyy_JD3GtEi01vKa3MS4ZgxkCrJHPuY1bVdIF7--dStff9JxwO891u5Am4pODrHFgNFHOmrqNjQb6mtq6cJvvGtqOrKh8CUelz8YOpS-7be75Nm6L7rE2N6Sq8puIt6dZ5-8j1-Wo0kym79OR8NZ4riGtivJOVYOCu1SXaassI5lToDVKFMnBIpMVWVeOQcAJa9kIXOZW8F4qXiaKtEnj6e7u9B07WNr1s0-1N1LwwFyyLSQeUexE-VCE2PAyuyC39pwMMDM0aLpLJqjRXO22EUeThGPiP-4EplMtRJ_hbdtNg</recordid><startdate>201809</startdate><enddate>201809</enddate><creator>She, Xu</creator><creator>Frangieh, Tony</creator><creator>Datta, Rajib</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><orcidid>https://orcid.org/0000-0002-2567-7179</orcidid></search><sort><creationdate>201809</creationdate><title>On the Switching Frequency of Hysteresis Control in a Silicon Carbide Converter Pump-Back Test</title><author>She, Xu ; Frangieh, Tony ; Datta, Rajib</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-9322efc1b9c59d50bac06c31a9e45c33e368fd7fcc111d2f4b4747a302d825583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Configurations</topic><topic>Converter testing</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>high-power converter</topic><topic>Hysteresis</topic><topic>hysteresis control</topic><topic>Inductors</topic><topic>Power converters</topic><topic>pump-back test</topic><topic>Silicon carbide</topic><topic>silicon carbide (SiC) converter</topic><topic>Switches</topic><topic>Switching</topic><topic>Switching frequency</topic><topic>Voltage control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>She, Xu</creatorcontrib><creatorcontrib>Frangieh, Tony</creatorcontrib><creatorcontrib>Datta, Rajib</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>IEEE transactions on industry applications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>She, Xu</au><au>Frangieh, Tony</au><au>Datta, Rajib</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the Switching Frequency of Hysteresis Control in a Silicon Carbide Converter Pump-Back Test</atitle><jtitle>IEEE transactions on industry applications</jtitle><stitle>TIA</stitle><date>2018-09</date><risdate>2018</risdate><volume>54</volume><issue>5</issue><spage>4886</spage><epage>4893</epage><pages>4886-4893</pages><issn>0093-9994</issn><eissn>1939-9367</eissn><coden>ITIACR</coden><abstract>The pump-back test is widely adopted in the industry for characterizing and qualifying high-power converters. One popular pump-back test configuration is to tie the dc links of two converters together and circulate the current through the inductor connected between the ac terminals. In this configuration, one of the converters operates in the voltage mode to generate the virtual grid and the other converter regulates the circulating current, where hysteresis control could be applied. However, the switching characteristics of hysteresis control are unique due to the pulsewidth modulation type voltage being the virtual grid. This paper contributes to analyzing the switching frequency characteristics of the hysteresis control in this pump-back test configuration. The switching frequency tracking phenomenon is revealed and reported in this paper for the first time. Theoretical analysis, simulation validation, and experimental demonstration are provided to support the major conclusions.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TIA.2018.2840080</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-2567-7179</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0093-9994 |
| ispartof | IEEE transactions on industry applications, 2018-09, Vol.54 (5), p.4886-4893 |
| issn | 0093-9994 1939-9367 |
| language | eng |
| recordid | cdi_ieee_primary_8364598 |
| source | IEEE Electronic Library (IEL) |
| subjects | Configurations Converter testing Electric potential Electronics high-power converter Hysteresis hysteresis control Inductors Power converters pump-back test Silicon carbide silicon carbide (SiC) converter Switches Switching Switching frequency Voltage control |
| title | On the Switching Frequency of Hysteresis Control in a Silicon Carbide Converter Pump-Back Test |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T22%3A26%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20Switching%20Frequency%20of%20Hysteresis%20Control%20in%20a%20Silicon%20Carbide%20Converter%20Pump-Back%20Test&rft.jtitle=IEEE%20transactions%20on%20industry%20applications&rft.au=She,%20Xu&rft.date=2018-09&rft.volume=54&rft.issue=5&rft.spage=4886&rft.epage=4893&rft.pages=4886-4893&rft.issn=0093-9994&rft.eissn=1939-9367&rft.coden=ITIACR&rft_id=info:doi/10.1109/TIA.2018.2840080&rft_dat=%3Cproquest_RIE%3E2117169347%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2117169347&rft_id=info:pmid/&rft_ieee_id=8364598&rfr_iscdi=true |