Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures
The authors discuss a family of surface-normal electrooptic reflection modulators using asymmetric Fabry-Perot (ASFP) structures with GaAs-AlGaAs multiple quantum wells (MQWs) as the active medium. When an optimized top mirror reflectivity ( approximately 75%) is used, a voltage swing as low as 2 V...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1991-07, Vol.27 (7), p.1922-1931 |
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| container_end_page | 1931 |
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| container_issue | 7 |
| container_start_page | 1922 |
| container_title | IEEE journal of quantum electronics |
| container_volume | 27 |
| creator | Yan, R.-H. Simes, R.J. Coldren, L.A. |
| description | The authors discuss a family of surface-normal electrooptic reflection modulators using asymmetric Fabry-Perot (ASFP) structures with GaAs-AlGaAs multiple quantum wells (MQWs) as the active medium. When an optimized top mirror reflectivity ( approximately 75%) is used, a voltage swing as low as 2 V is enough to change the device reflectivity by more than 40% with a contrast ratio of 50. A comparison with various Fabry-Perot structures shows that the ASFP is the best structure in terms of its operating voltage requirement and optical bandwidth. A sensitivity analysis shows that tolerances of 2 nm in operating wavelength, 0.5 V in operating voltage, 0.3% in layer thickness control or 10 degrees C in temperature variation can be expected from ASFPs with a finesse approximately 10.< > |
| doi_str_mv | 10.1109/3.83394 |
| format | Article |
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When an optimized top mirror reflectivity ( approximately 75%) is used, a voltage swing as low as 2 V is enough to change the device reflectivity by more than 40% with a contrast ratio of 50. A comparison with various Fabry-Perot structures shows that the ASFP is the best structure in terms of its operating voltage requirement and optical bandwidth. A sensitivity analysis shows that tolerances of 2 nm in operating wavelength, 0.5 V in operating voltage, 0.3% in layer thickness control or 10 degrees C in temperature variation can be expected from ASFPs with a finesse approximately 10.< ></description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.83394</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Bandwidth ; Electrooptic modulators ; Exact sciences and technology ; Fabry-Perot ; Fundamental areas of phenomenology (including applications) ; Low voltage ; Mirrors ; Optical elements, devices, and systems ; Optical processors, correlators, and modulators ; Optical reflection ; Optical sensors ; Optical surface waves ; Optics ; Physics ; Quantum well devices ; Reflectivity</subject><ispartof>IEEE journal of quantum electronics, 1991-07, Vol.27 (7), p.1922-1931</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-d885be9071c2e78a60c0ff9ad6a301682b2e2717b7a627e350695c59fb4783573</citedby><cites>FETCH-LOGICAL-c367t-d885be9071c2e78a60c0ff9ad6a301682b2e2717b7a627e350695c59fb4783573</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/83394$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/83394$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4970016$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yan, R.-H.</creatorcontrib><creatorcontrib>Simes, R.J.</creatorcontrib><creatorcontrib>Coldren, L.A.</creatorcontrib><title>Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>The authors discuss a family of surface-normal electrooptic reflection modulators using asymmetric Fabry-Perot (ASFP) structures with GaAs-AlGaAs multiple quantum wells (MQWs) as the active medium. When an optimized top mirror reflectivity ( approximately 75%) is used, a voltage swing as low as 2 V is enough to change the device reflectivity by more than 40% with a contrast ratio of 50. A comparison with various Fabry-Perot structures shows that the ASFP is the best structure in terms of its operating voltage requirement and optical bandwidth. A sensitivity analysis shows that tolerances of 2 nm in operating wavelength, 0.5 V in operating voltage, 0.3% in layer thickness control or 10 degrees C in temperature variation can be expected from ASFPs with a finesse approximately 10.< ></description><subject>Bandwidth</subject><subject>Electrooptic modulators</subject><subject>Exact sciences and technology</subject><subject>Fabry-Perot</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Low voltage</subject><subject>Mirrors</subject><subject>Optical elements, devices, and systems</subject><subject>Optical processors, correlators, and modulators</subject><subject>Optical reflection</subject><subject>Optical sensors</subject><subject>Optical surface waves</subject><subject>Optics</subject><subject>Physics</subject><subject>Quantum well devices</subject><subject>Reflectivity</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFbx7C0H0VPqbjbZj6OIVaGgoF4Nm-1EIkm2zmwO_fempvQ0Xw8PzMvYpeALIbi9kwsjpc2P2EwUhUmFFvKYzTgXJrXC6lN2RvQzjnlu-Ix9vQ9YOw9pH7BzbQIt-IjBVRRwE5vQJwj1brdru7AeWhcDUjJQ038njrZdBxEbnyxdhdv0DTDEhCIOPg4IdM5OatcSXOzrnH0uHz8entPV69PLw_0q9VLpmK6NKSqwXAufgTZOcc_r2rq1cpILZbIqg0wLXWmnMg2y4MoWvrB1lWsjCy3n7GbybjD8DkCx7Bry0LauhzBQmRkleCbyEbydQI-BaPyt3GDTOdyWgpe7_EpZ_uc3ktd7pSPv2hpd7xs64LnVY4hqxK4mrAGAw3VS_AFW2Hin</recordid><startdate>19910701</startdate><enddate>19910701</enddate><creator>Yan, R.-H.</creator><creator>Simes, R.J.</creator><creator>Coldren, L.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19910701</creationdate><title>Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures</title><author>Yan, R.-H. ; Simes, R.J. ; Coldren, L.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c367t-d885be9071c2e78a60c0ff9ad6a301682b2e2717b7a627e350695c59fb4783573</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Bandwidth</topic><topic>Electrooptic modulators</topic><topic>Exact sciences and technology</topic><topic>Fabry-Perot</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Low voltage</topic><topic>Mirrors</topic><topic>Optical elements, devices, and systems</topic><topic>Optical processors, correlators, and modulators</topic><topic>Optical reflection</topic><topic>Optical sensors</topic><topic>Optical surface waves</topic><topic>Optics</topic><topic>Physics</topic><topic>Quantum well devices</topic><topic>Reflectivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yan, R.-H.</creatorcontrib><creatorcontrib>Simes, R.J.</creatorcontrib><creatorcontrib>Coldren, L.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yan, R.-H.</au><au>Simes, R.J.</au><au>Coldren, L.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1991-07-01</date><risdate>1991</risdate><volume>27</volume><issue>7</issue><spage>1922</spage><epage>1931</epage><pages>1922-1931</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>The authors discuss a family of surface-normal electrooptic reflection modulators using asymmetric Fabry-Perot (ASFP) structures with GaAs-AlGaAs multiple quantum wells (MQWs) as the active medium. When an optimized top mirror reflectivity ( approximately 75%) is used, a voltage swing as low as 2 V is enough to change the device reflectivity by more than 40% with a contrast ratio of 50. A comparison with various Fabry-Perot structures shows that the ASFP is the best structure in terms of its operating voltage requirement and optical bandwidth. A sensitivity analysis shows that tolerances of 2 nm in operating wavelength, 0.5 V in operating voltage, 0.3% in layer thickness control or 10 degrees C in temperature variation can be expected from ASFPs with a finesse approximately 10.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.83394</doi><tpages>10</tpages></addata></record> |
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| identifier | ISSN: 0018-9197 |
| ispartof | IEEE journal of quantum electronics, 1991-07, Vol.27 (7), p.1922-1931 |
| issn | 0018-9197 1558-1713 |
| language | eng |
| recordid | cdi_ieee_primary_83394 |
| source | IEEE Electronic Library (IEL) |
| subjects | Bandwidth Electrooptic modulators Exact sciences and technology Fabry-Perot Fundamental areas of phenomenology (including applications) Low voltage Mirrors Optical elements, devices, and systems Optical processors, correlators, and modulators Optical reflection Optical sensors Optical surface waves Optics Physics Quantum well devices Reflectivity |
| title | Surface-normal electroabsorption reflection modulators using asymmetric Fabry-Perot structures |
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