High-Performance and Flexible Neodymium- Doped Oxide Semiconductor Thin-Film Transistors With Copper Alloy Bottom-Gate Electrode

In this letter, copper alloy Cu-0.3 wt.% Cr-0.2 wt.% Zr film was used as bottom-gate electrode for flexible neodymium-doped InZnO thin-film transistor (TFT) applications. The results showed that the sputtering power and annealing temperature of a Cu–Cr–Zr film on a polyimide (PI) substrate greatly a...

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Veröffentlicht in:	IEEE electron device letters 2018-06, Vol.39 (6), p.839-842
Hauptverfasser:	Lu, Kuankuan, Yao, Rihui, Hu, Shiben, Liu, Xianzhe, Wei, Jinglin, Wu, Weijing, Ning, Honglong, Xu, Miao, Lan, Linfeng, Peng, Junbiao
Format:	Artikel
Sprache:	eng
Schlagworte:	Adhesives Annealing Conductivity Copper alloy gate-electrode Electrodes Nd.IZO PI substrate stability Stress Substrates Thin film transistors
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