A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling

Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design c...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2018-06, Vol.66 (6), p.2638-2648
Hauptverfasser:	Park, Hongjong, Nam, Hyosung, Choi, Kwangseok, Kim, Junghyun, Kwon, Youngwoo
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Bias Broadband amplifier Capacitance Couplings Cutoff frequency distributed amplifier (DA) Distributed amplifiers Electric power distribution Gain Gallium nitride GaN monolithic microwave integrated circuit (MMIC) High gain Layout Layouts multioctave power amplifier (PA) Power amplifiers Thermal coupling Transistors
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