A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling
Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design c...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2018-06, Vol.66 (6), p.2638-2648 |
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description | Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design criteria for interstage matching of reactively matched cells. A shared dc bias network is proposed to simplify the biasing of each section to reduce the DPA die size. The thermal coupling effect of GaN high-power amplifier is minimized by optimizing the chip layout. The theoretical analysis is verified by the simulation and supported by the measured data. Two RMDAs are fabricated with a commercial 0.25- \mu \text{m} GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm 2 and shows output powers reaching 40.3-43.9 dBm, power added efficiencies (PAEs) of 16-27%, and small-signal gains of 15.3-23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm 2 . To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size. |
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fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_8330036</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8330036</ieee_id><sourcerecordid>2174486933</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-3ab72c0c34ea5e0d20c1d65e99b640193968a96a2f6ae742447541477c32a6253</originalsourceid><addsrcrecordid>eNo9UF1PwjAUbYwmIvoDjC9NfB72u-sjooIJoNHxvJSuQHVs2G4i_npLID7dc-_5uMkB4BqjHsZI3WWTLOsRhNMeSbHkBJ-ADuZcJkpIdAo6KFKJYik6BxchfMSVcZR2wE8fiiRSw9EvHOopfLPaNO7bljs40Y1Z2QI-uNB4N2-biF_rrfWwv96UbuEimgVXLeG7Ox4KeO90gFPbbGv_CXVVxMCiNZHIVtavdQkHdRu11fISnC10GezVcXbB7OkxG4yS8cvwedAfJ4Zy1SRUzyUxyFBmNbeoIMjgQnCr1FwwhBVVItVKaLIQ2kpGGJOcYSaloUQLwmkX3B5yN77-am1o8o-69VV8mRMsGUuFojSq8EFlfB2Ct4t8491a-12OUb4vON8XnO8Lzo8FR8_NweOstf_6lFKEqKB__4N1dw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2174486933</pqid></control><display><type>article</type><title>A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling</title><source>IEEE Electronic Library (IEL)</source><creator>Park, Hongjong ; Nam, Hyosung ; Choi, Kwangseok ; Kim, Junghyun ; Kwon, Youngwoo</creator><creatorcontrib>Park, Hongjong ; Nam, Hyosung ; Choi, Kwangseok ; Kim, Junghyun ; Kwon, Youngwoo</creatorcontrib><description>Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design criteria for interstage matching of reactively matched cells. A shared dc bias network is proposed to simplify the biasing of each section to reduce the DPA die size. The thermal coupling effect of GaN high-power amplifier is minimized by optimizing the chip layout. The theoretical analysis is verified by the simulation and supported by the measured data. Two RMDAs are fabricated with a commercial 0.25-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm 2 and shows output powers reaching 40.3-43.9 dBm, power added efficiencies (PAEs) of 16-27%, and small-signal gains of 15.3-23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm 2 . To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2018.2817521</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amplification ; Bias ; Broadband amplifier ; Capacitance ; Couplings ; Cutoff frequency ; distributed amplifier (DA) ; Distributed amplifiers ; Electric power distribution ; Gain ; Gallium nitride ; GaN monolithic microwave integrated circuit (MMIC) ; High gain ; Layout ; Layouts ; multioctave ; power amplifier (PA) ; Power amplifiers ; Thermal coupling ; Transistors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2018-06, Vol.66 (6), p.2638-2648</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-3ab72c0c34ea5e0d20c1d65e99b640193968a96a2f6ae742447541477c32a6253</citedby><cites>FETCH-LOGICAL-c359t-3ab72c0c34ea5e0d20c1d65e99b640193968a96a2f6ae742447541477c32a6253</cites><orcidid>0000-0001-9424-3377 ; 0000-0002-8197-9569 ; 0000-0002-6622-9073</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8330036$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8330036$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Park, Hongjong</creatorcontrib><creatorcontrib>Nam, Hyosung</creatorcontrib><creatorcontrib>Choi, Kwangseok</creatorcontrib><creatorcontrib>Kim, Junghyun</creatorcontrib><creatorcontrib>Kwon, Youngwoo</creatorcontrib><title>A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design criteria for interstage matching of reactively matched cells. A shared dc bias network is proposed to simplify the biasing of each section to reduce the DPA die size. The thermal coupling effect of GaN high-power amplifier is minimized by optimizing the chip layout. The theoretical analysis is verified by the simulation and supported by the measured data. Two RMDAs are fabricated with a commercial 0.25-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm 2 and shows output powers reaching 40.3-43.9 dBm, power added efficiencies (PAEs) of 16-27%, and small-signal gains of 15.3-23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm 2 . To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size.</description><subject>Amplification</subject><subject>Bias</subject><subject>Broadband amplifier</subject><subject>Capacitance</subject><subject>Couplings</subject><subject>Cutoff frequency</subject><subject>distributed amplifier (DA)</subject><subject>Distributed amplifiers</subject><subject>Electric power distribution</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>GaN monolithic microwave integrated circuit (MMIC)</subject><subject>High gain</subject><subject>Layout</subject><subject>Layouts</subject><subject>multioctave</subject><subject>power amplifier (PA)</subject><subject>Power amplifiers</subject><subject>Thermal coupling</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UF1PwjAUbYwmIvoDjC9NfB72u-sjooIJoNHxvJSuQHVs2G4i_npLID7dc-_5uMkB4BqjHsZI3WWTLOsRhNMeSbHkBJ-ADuZcJkpIdAo6KFKJYik6BxchfMSVcZR2wE8fiiRSw9EvHOopfLPaNO7bljs40Y1Z2QI-uNB4N2-biF_rrfWwv96UbuEimgVXLeG7Ox4KeO90gFPbbGv_CXVVxMCiNZHIVtavdQkHdRu11fISnC10GezVcXbB7OkxG4yS8cvwedAfJ4Zy1SRUzyUxyFBmNbeoIMjgQnCr1FwwhBVVItVKaLIQ2kpGGJOcYSaloUQLwmkX3B5yN77-am1o8o-69VV8mRMsGUuFojSq8EFlfB2Ct4t8491a-12OUb4vON8XnO8Lzo8FR8_NweOstf_6lFKEqKB__4N1dw</recordid><startdate>20180601</startdate><enddate>20180601</enddate><creator>Park, Hongjong</creator><creator>Nam, Hyosung</creator><creator>Choi, Kwangseok</creator><creator>Kim, Junghyun</creator><creator>Kwon, Youngwoo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9424-3377</orcidid><orcidid>https://orcid.org/0000-0002-8197-9569</orcidid><orcidid>https://orcid.org/0000-0002-6622-9073</orcidid></search><sort><creationdate>20180601</creationdate><title>A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling</title><author>Park, Hongjong ; Nam, Hyosung ; Choi, Kwangseok ; Kim, Junghyun ; Kwon, Youngwoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-3ab72c0c34ea5e0d20c1d65e99b640193968a96a2f6ae742447541477c32a6253</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Amplification</topic><topic>Bias</topic><topic>Broadband amplifier</topic><topic>Capacitance</topic><topic>Couplings</topic><topic>Cutoff frequency</topic><topic>distributed amplifier (DA)</topic><topic>Distributed amplifiers</topic><topic>Electric power distribution</topic><topic>Gain</topic><topic>Gallium nitride</topic><topic>GaN monolithic microwave integrated circuit (MMIC)</topic><topic>High gain</topic><topic>Layout</topic><topic>Layouts</topic><topic>multioctave</topic><topic>power amplifier (PA)</topic><topic>Power amplifiers</topic><topic>Thermal coupling</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Hongjong</creatorcontrib><creatorcontrib>Nam, Hyosung</creatorcontrib><creatorcontrib>Choi, Kwangseok</creatorcontrib><creatorcontrib>Kim, Junghyun</creatorcontrib><creatorcontrib>Kwon, Youngwoo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, Hongjong</au><au>Nam, Hyosung</au><au>Choi, Kwangseok</au><au>Kim, Junghyun</au><au>Kwon, Youngwoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2018-06-01</date><risdate>2018</risdate><volume>66</volume><issue>6</issue><spage>2638</spage><epage>2648</epage><pages>2638-2648</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design criteria for interstage matching of reactively matched cells. A shared dc bias network is proposed to simplify the biasing of each section to reduce the DPA die size. The thermal coupling effect of GaN high-power amplifier is minimized by optimizing the chip layout. The theoretical analysis is verified by the simulation and supported by the measured data. Two RMDAs are fabricated with a commercial 0.25-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm 2 and shows output powers reaching 40.3-43.9 dBm, power added efficiencies (PAEs) of 16-27%, and small-signal gains of 15.3-23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm 2 . To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2018.2817521</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0001-9424-3377</orcidid><orcidid>https://orcid.org/0000-0002-8197-9569</orcidid><orcidid>https://orcid.org/0000-0002-6622-9073</orcidid></addata></record> |
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subjects | Amplification Bias Broadband amplifier Capacitance Couplings Cutoff frequency distributed amplifier (DA) Distributed amplifiers Electric power distribution Gain Gallium nitride GaN monolithic microwave integrated circuit (MMIC) High gain Layout Layouts multioctave power amplifier (PA) Power amplifiers Thermal coupling Transistors |
title | A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling |
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