A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling

Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design c...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2018-06, Vol.66 (6), p.2638-2648
Hauptverfasser: Park, Hongjong, Nam, Hyosung, Choi, Kwangseok, Kim, Junghyun, Kwon, Youngwoo
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container_issue 6
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container_title IEEE transactions on microwave theory and techniques
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creator Park, Hongjong
Nam, Hyosung
Choi, Kwangseok
Kim, Junghyun
Kwon, Youngwoo
description Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design criteria for interstage matching of reactively matched cells. A shared dc bias network is proposed to simplify the biasing of each section to reduce the DPA die size. The thermal coupling effect of GaN high-power amplifier is minimized by optimizing the chip layout. The theoretical analysis is verified by the simulation and supported by the measured data. Two RMDAs are fabricated with a commercial 0.25- \mu \text{m} GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm 2 and shows output powers reaching 40.3-43.9 dBm, power added efficiencies (PAEs) of 16-27%, and small-signal gains of 15.3-23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm 2 . To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size.
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The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm 2 . 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subjects Amplification
Bias
Broadband amplifier
Capacitance
Couplings
Cutoff frequency
distributed amplifier (DA)
Distributed amplifiers
Electric power distribution
Gain
Gallium nitride
GaN monolithic microwave integrated circuit (MMIC)
High gain
Layout
Layouts
multioctave
power amplifier (PA)
Power amplifiers
Thermal coupling
Transistors
title A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling
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