Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

Si-substrate-based AlGaN/GaN high-electron mobility power transistors with low pressure chemical vapor deposition (LPCVD) SiN x as gate isolation material are fabricated on a 6-in wafer by CMOS compatible process. The dielectric failure by forward-biased constant-voltage stress time-dependent dielec...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-05, Vol.65 (5), p.1759-1764
Hauptverfasser:	Qi, Yongle, Zhu, Yumeng, Zhang, Jiang, Lin, Xinpeng, Cheng, Kai, Jiang, Lingli, Yu, Hongyu
Format:	Artikel
Sprache:	eng
Schlagworte:	Constant-voltage stress (CVS) Dielectrics Gallium nitride gallium nitride (GaN) HEMTs Logic gates metal–insulator–semiconductor high-electron mobility transistor (MIS-HEMT) Reliability Stress Temperature measurement time-dependent dielectric breakdown (TDDB)
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