The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measur...

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Veröffentlicht in:	IEEE photonics journal 2018-04, Vol.10 (2), p.1-9
Hauptverfasser:	Jiang, Fulong, Liu, Yaying, Liu, Menghan, Zhuo, Ningze, Gao, Peng, Fang, Huajie, Chen, Peng, Liu, Bin, Xiu, Xiangqian, Xie, Zili, Han, Ping, Shi, Yi, Zhang, Rong, Zheng, Youdou
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Charge carrier density efficiency droop Electric fields InGaN Multiple Quantum Wells polarization Quantum well devices Radiative recombination Superlattices Wide band gap semiconductors
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