Perfluorocompound Emissions Control and Kinetic Characteristics in Point-of-Use Wet-Thermal-Wet Abatement of Plasma-Enhanced Chemical Vapor Deposition Chamber Cleaning
Electric thermal oxidation of NF 3 is studied in the context of kinetic and activation energy, with an emphasis on correlation with reaction rate. To improve economic feasibility of the wet-thermal-wet abatement process, the effect of NF 3 flow rate, N 2 flow rate, and operational temperature on dec...
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| Veröffentlicht in: | IEEE transactions on semiconductor manufacturing 2018-05, Vol.31 (2), p.302-308 |
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| creator | Hu, Shih-Cheng Shiue, Angus Tseng, Wei-Ting Leggett, Graham |
| description | Electric thermal oxidation of NF 3 is studied in the context of kinetic and activation energy, with an emphasis on correlation with reaction rate. To improve economic feasibility of the wet-thermal-wet abatement process, the effect of NF 3 flow rate, N 2 flow rate, and operational temperature on decomposition of NF 3 are examined. The reactions in question follow first order kinetics. It was found the rate constant is enhanced with increasing flow rate of NF 3 and temperature, and decreased with increasing flow rate of N 2 . The highest rate constant of NF 3 was 0.5501 s −1 for 13 liter per minute (LPM) NF 3 flow rate, 70 LPM N 2 flow rate, and a temperature of 725 °C. The inlet and outlet concentration of NF 3 was examined utilizing Fourier-transform infrared spectroscopy for estimation of NF 3 decomposition. This paper not only confirms that large amounts of NF 3 can be efficiently decomposed by electric thermal oxidation, but also enhances the feasibility of this technology. |
| doi_str_mv | 10.1109/TSM.2018.2808173 |
| format | Article |
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To improve economic feasibility of the wet-thermal-wet abatement process, the effect of NF 3 flow rate, N 2 flow rate, and operational temperature on decomposition of NF 3 are examined. The reactions in question follow first order kinetics. It was found the rate constant is enhanced with increasing flow rate of NF 3 and temperature, and decreased with increasing flow rate of N 2 . The highest rate constant of NF 3 was 0.5501 s −1 for 13 liter per minute (LPM) NF 3 flow rate, 70 LPM N 2 flow rate, and a temperature of 725 °C. The inlet and outlet concentration of NF 3 was examined utilizing Fourier-transform infrared spectroscopy for estimation of NF 3 decomposition. This paper not only confirms that large amounts of NF 3 can be efficiently decomposed by electric thermal oxidation, but also enhances the feasibility of this technology.</description><identifier>ISSN: 0894-6507</identifier><identifier>EISSN: 1558-2345</identifier><identifier>DOI: 10.1109/TSM.2018.2808173</identifier><identifier>CODEN: ITSMED</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Cleaning ; Decomposition ; Decomposition reactions ; Electric thermal oxidation ; Emissions control ; Feasibility ; Flow velocity ; Fourier transforms ; Gases ; Heating systems ; kinetic ; Kinetic theory ; nitrogen trifluoride ; Organic chemistry ; Oxidation ; PFC ; Plasma enhanced chemical vapor deposition ; Plasmas ; Reaction kinetics ; Semiconductor device measurement ; Temperature measurement</subject><ispartof>IEEE transactions on semiconductor manufacturing, 2018-05, Vol.31 (2), p.302-308</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-3824559cc63e44edb9f146a10dd843e94896f057c579dbb73478001fb62077ee3</citedby><cites>FETCH-LOGICAL-c291t-3824559cc63e44edb9f146a10dd843e94896f057c579dbb73478001fb62077ee3</cites><orcidid>0000-0003-4378-758X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8318701$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8318701$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hu, Shih-Cheng</creatorcontrib><creatorcontrib>Shiue, Angus</creatorcontrib><creatorcontrib>Tseng, Wei-Ting</creatorcontrib><creatorcontrib>Leggett, Graham</creatorcontrib><title>Perfluorocompound Emissions Control and Kinetic Characteristics in Point-of-Use Wet-Thermal-Wet Abatement of Plasma-Enhanced Chemical Vapor Deposition Chamber Cleaning</title><title>IEEE transactions on semiconductor manufacturing</title><addtitle>TSM</addtitle><description>Electric thermal oxidation of NF 3 is studied in the context of kinetic and activation energy, with an emphasis on correlation with reaction rate. To improve economic feasibility of the wet-thermal-wet abatement process, the effect of NF 3 flow rate, N 2 flow rate, and operational temperature on decomposition of NF 3 are examined. The reactions in question follow first order kinetics. It was found the rate constant is enhanced with increasing flow rate of NF 3 and temperature, and decreased with increasing flow rate of N 2 . The highest rate constant of NF 3 was 0.5501 s −1 for 13 liter per minute (LPM) NF 3 flow rate, 70 LPM N 2 flow rate, and a temperature of 725 °C. The inlet and outlet concentration of NF 3 was examined utilizing Fourier-transform infrared spectroscopy for estimation of NF 3 decomposition. This paper not only confirms that large amounts of NF 3 can be efficiently decomposed by electric thermal oxidation, but also enhances the feasibility of this technology.</description><subject>Cleaning</subject><subject>Decomposition</subject><subject>Decomposition reactions</subject><subject>Electric thermal oxidation</subject><subject>Emissions control</subject><subject>Feasibility</subject><subject>Flow velocity</subject><subject>Fourier transforms</subject><subject>Gases</subject><subject>Heating systems</subject><subject>kinetic</subject><subject>Kinetic theory</subject><subject>nitrogen trifluoride</subject><subject>Organic chemistry</subject><subject>Oxidation</subject><subject>PFC</subject><subject>Plasma enhanced chemical vapor deposition</subject><subject>Plasmas</subject><subject>Reaction kinetics</subject><subject>Semiconductor device measurement</subject><subject>Temperature measurement</subject><issn>0894-6507</issn><issn>1558-2345</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kc1u1DAUhS0EEkPpHomNJdYe7NiO7WUVhhZRxEidwjJynBvGVWIH27PgiXhNPJqK1f3ROfdI90PoHaNbxqj5eHj4tm0o09tGU80Uf4E2TEpNGi7kS7Sh2gjSSqpeozc5P1HKhDBqg_7uIU3zKabo4rLGUxjxbvE5-xgy7mIoKc7Y1u1XH6B4h7ujTdYVSD7XMWMf8D76UEicyGMG_BMKORwhLXYmtcc3gy2wQCg4Tng_27xYsgtHGxyM9Rgs3tkZ_7BrTPgTrDH7UrPPMcsACXcz2ODDr7fo1WTnDNfP9Qo9ft4dujty__32S3dzT1xjWCFcN0JK41zLQQgYBzMx0VpGx1ELDkZo005UKieVGYdBcaF0_cU0tA1VCoBfoQ-Xu2uKv0-QS_8UTynUyL6hnJtWNlxXFb2oXIo5J5j6NfnFpj89o_0ZR19x9Gcc_TOOanl_sXgA-C_XnGlFGf8HLsiIfw</recordid><startdate>20180501</startdate><enddate>20180501</enddate><creator>Hu, Shih-Cheng</creator><creator>Shiue, Angus</creator><creator>Tseng, Wei-Ting</creator><creator>Leggett, Graham</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4378-758X</orcidid></search><sort><creationdate>20180501</creationdate><title>Perfluorocompound Emissions Control and Kinetic Characteristics in Point-of-Use Wet-Thermal-Wet Abatement of Plasma-Enhanced Chemical Vapor Deposition Chamber Cleaning</title><author>Hu, Shih-Cheng ; Shiue, Angus ; Tseng, Wei-Ting ; Leggett, Graham</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-3824559cc63e44edb9f146a10dd843e94896f057c579dbb73478001fb62077ee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Cleaning</topic><topic>Decomposition</topic><topic>Decomposition reactions</topic><topic>Electric thermal oxidation</topic><topic>Emissions control</topic><topic>Feasibility</topic><topic>Flow velocity</topic><topic>Fourier transforms</topic><topic>Gases</topic><topic>Heating systems</topic><topic>kinetic</topic><topic>Kinetic theory</topic><topic>nitrogen trifluoride</topic><topic>Organic chemistry</topic><topic>Oxidation</topic><topic>PFC</topic><topic>Plasma enhanced chemical vapor deposition</topic><topic>Plasmas</topic><topic>Reaction kinetics</topic><topic>Semiconductor device measurement</topic><topic>Temperature measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hu, Shih-Cheng</creatorcontrib><creatorcontrib>Shiue, Angus</creatorcontrib><creatorcontrib>Tseng, Wei-Ting</creatorcontrib><creatorcontrib>Leggett, Graham</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on semiconductor manufacturing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hu, Shih-Cheng</au><au>Shiue, Angus</au><au>Tseng, Wei-Ting</au><au>Leggett, Graham</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Perfluorocompound Emissions Control and Kinetic Characteristics in Point-of-Use Wet-Thermal-Wet Abatement of Plasma-Enhanced Chemical Vapor Deposition Chamber Cleaning</atitle><jtitle>IEEE transactions on semiconductor manufacturing</jtitle><stitle>TSM</stitle><date>2018-05-01</date><risdate>2018</risdate><volume>31</volume><issue>2</issue><spage>302</spage><epage>308</epage><pages>302-308</pages><issn>0894-6507</issn><eissn>1558-2345</eissn><coden>ITSMED</coden><abstract>Electric thermal oxidation of NF 3 is studied in the context of kinetic and activation energy, with an emphasis on correlation with reaction rate. To improve economic feasibility of the wet-thermal-wet abatement process, the effect of NF 3 flow rate, N 2 flow rate, and operational temperature on decomposition of NF 3 are examined. The reactions in question follow first order kinetics. It was found the rate constant is enhanced with increasing flow rate of NF 3 and temperature, and decreased with increasing flow rate of N 2 . The highest rate constant of NF 3 was 0.5501 s −1 for 13 liter per minute (LPM) NF 3 flow rate, 70 LPM N 2 flow rate, and a temperature of 725 °C. The inlet and outlet concentration of NF 3 was examined utilizing Fourier-transform infrared spectroscopy for estimation of NF 3 decomposition. This paper not only confirms that large amounts of NF 3 can be efficiently decomposed by electric thermal oxidation, but also enhances the feasibility of this technology.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TSM.2018.2808173</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-4378-758X</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Cleaning Decomposition Decomposition reactions Electric thermal oxidation Emissions control Feasibility Flow velocity Fourier transforms Gases Heating systems kinetic Kinetic theory nitrogen trifluoride Organic chemistry Oxidation PFC Plasma enhanced chemical vapor deposition Plasmas Reaction kinetics Semiconductor device measurement Temperature measurement |
| title | Perfluorocompound Emissions Control and Kinetic Characteristics in Point-of-Use Wet-Thermal-Wet Abatement of Plasma-Enhanced Chemical Vapor Deposition Chamber Cleaning |
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