On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si
A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser and the photodetector. By varying the applied voltage to the modulator, the absor...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2018-11, Vol.24 (6), p.1-5 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Meixin Feng Jin Wang Rui Zhou Qian Sun Hongwei Gao Yu Zhou Jianxun Liu Yingnan Huang Shuming Zhang Ikeda, Masao Huaibing Wang Yuantao Zhang Yongjin Wang Hui Yang |
| description | A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser and the photodetector. By varying the applied voltage to the modulator, the absorption of the modulator can be adjusted due to the changed band bending of the InGaN quantum well active region, and hence the threshold current and the light output power of the laser can be tuned. The photodetector can effectively detect the output power of the laser tuned by the applied voltage to the modulator, which opens up a new way for GaN-based on-chip photonic integration on Si. |
| doi_str_mv | 10.1109/JSTQE.2018.2815906 |
| format | Article |
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The photodetector can effectively detect the output power of the laser tuned by the applied voltage to the modulator, which opens up a new way for GaN-based on-chip photonic integration on Si.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2018.2815906</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; GaN ; integration ; Laser ; Lasers ; Modulation ; modulator ; photodetector ; Photodetectors ; Power generation ; Silicon ; System-on-chip</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2018-11, Vol.24 (6), p.1-5</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c382t-f30357e494d05684abdb06097394b52280c4384b1370dbe11d7392c75c347e773</citedby><cites>FETCH-LOGICAL-c382t-f30357e494d05684abdb06097394b52280c4384b1370dbe11d7392c75c347e773</cites><orcidid>0000-0001-8109-4640 ; 0000-0001-5495-2232 ; 0000-0001-7968-3323 ; 0000-0002-3206-6990</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8315432$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8315432$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Meixin Feng</creatorcontrib><creatorcontrib>Jin Wang</creatorcontrib><creatorcontrib>Rui Zhou</creatorcontrib><creatorcontrib>Qian Sun</creatorcontrib><creatorcontrib>Hongwei Gao</creatorcontrib><creatorcontrib>Yu Zhou</creatorcontrib><creatorcontrib>Jianxun Liu</creatorcontrib><creatorcontrib>Yingnan Huang</creatorcontrib><creatorcontrib>Shuming Zhang</creatorcontrib><creatorcontrib>Ikeda, Masao</creatorcontrib><creatorcontrib>Huaibing Wang</creatorcontrib><creatorcontrib>Yuantao Zhang</creatorcontrib><creatorcontrib>Yongjin Wang</creatorcontrib><creatorcontrib>Hui Yang</creatorcontrib><title>On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser and the photodetector. By varying the applied voltage to the modulator, the absorption of the modulator can be adjusted due to the changed band bending of the InGaN quantum well active region, and hence the threshold current and the light output power of the laser can be tuned. The photodetector can effectively detect the output power of the laser tuned by the applied voltage to the modulator, which opens up a new way for GaN-based on-chip photonic integration on Si.</description><subject>Absorption</subject><subject>GaN</subject><subject>integration</subject><subject>Laser</subject><subject>Lasers</subject><subject>Modulation</subject><subject>modulator</subject><subject>photodetector</subject><subject>Photodetectors</subject><subject>Power generation</subject><subject>Silicon</subject><subject>System-on-chip</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMtOwzAQRS0EEqXwA7DxB-AwfsXOEqoSigItapHYRU7s0KASV04Q4u9xacVm5uqOziwOQpcUEkohu3lcrl6mCQOqE6apzCA9QiMqpSZCCnYcMyhFWApvp-is7z8AQAsNI7SYd2Sybrd41g3uPZih9R32Dc7NM7kzvbO4iDNc4ydvvzZm8DGazuLF2g_eusHVscJ58N8R6_CyPUcnjdn07uKwx-j1frqaPJBins8mtwWpuWYDaThwqZzIhAWZamEqW0EKmeKZqCRjGmrBtagoV2ArR6mNF1YrWXOhnFJ8jNj-bx183wfXlNvQfprwU1Iod07KPyflzkl5cBKhqz3UOuf-Ac2pFJzxXxXYW68</recordid><startdate>201811</startdate><enddate>201811</enddate><creator>Meixin Feng</creator><creator>Jin Wang</creator><creator>Rui Zhou</creator><creator>Qian Sun</creator><creator>Hongwei Gao</creator><creator>Yu Zhou</creator><creator>Jianxun Liu</creator><creator>Yingnan Huang</creator><creator>Shuming Zhang</creator><creator>Ikeda, Masao</creator><creator>Huaibing Wang</creator><creator>Yuantao Zhang</creator><creator>Yongjin Wang</creator><creator>Hui Yang</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-8109-4640</orcidid><orcidid>https://orcid.org/0000-0001-5495-2232</orcidid><orcidid>https://orcid.org/0000-0001-7968-3323</orcidid><orcidid>https://orcid.org/0000-0002-3206-6990</orcidid></search><sort><creationdate>201811</creationdate><title>On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si</title><author>Meixin Feng ; Jin Wang ; Rui Zhou ; Qian Sun ; Hongwei Gao ; Yu Zhou ; Jianxun Liu ; Yingnan Huang ; Shuming Zhang ; Ikeda, Masao ; Huaibing Wang ; Yuantao Zhang ; Yongjin Wang ; Hui Yang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c382t-f30357e494d05684abdb06097394b52280c4384b1370dbe11d7392c75c347e773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Absorption</topic><topic>GaN</topic><topic>integration</topic><topic>Laser</topic><topic>Lasers</topic><topic>Modulation</topic><topic>modulator</topic><topic>photodetector</topic><topic>Photodetectors</topic><topic>Power generation</topic><topic>Silicon</topic><topic>System-on-chip</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meixin Feng</creatorcontrib><creatorcontrib>Jin Wang</creatorcontrib><creatorcontrib>Rui Zhou</creatorcontrib><creatorcontrib>Qian Sun</creatorcontrib><creatorcontrib>Hongwei Gao</creatorcontrib><creatorcontrib>Yu Zhou</creatorcontrib><creatorcontrib>Jianxun Liu</creatorcontrib><creatorcontrib>Yingnan Huang</creatorcontrib><creatorcontrib>Shuming Zhang</creatorcontrib><creatorcontrib>Ikeda, Masao</creatorcontrib><creatorcontrib>Huaibing Wang</creatorcontrib><creatorcontrib>Yuantao Zhang</creatorcontrib><creatorcontrib>Yongjin Wang</creatorcontrib><creatorcontrib>Hui Yang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Meixin Feng</au><au>Jin Wang</au><au>Rui Zhou</au><au>Qian Sun</au><au>Hongwei Gao</au><au>Yu Zhou</au><au>Jianxun Liu</au><au>Yingnan Huang</au><au>Shuming Zhang</au><au>Ikeda, Masao</au><au>Huaibing Wang</au><au>Yuantao Zhang</au><au>Yongjin Wang</au><au>Hui Yang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>2018-11</date><risdate>2018</risdate><volume>24</volume><issue>6</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>A preliminary on-chip integration of GaN-based laser, modulator, and photodetector grown on Si is reported. The modulator is integrated into the laser and shares the same InGaN quantum well active region with the laser and the photodetector. By varying the applied voltage to the modulator, the absorption of the modulator can be adjusted due to the changed band bending of the InGaN quantum well active region, and hence the threshold current and the light output power of the laser can be tuned. The photodetector can effectively detect the output power of the laser tuned by the applied voltage to the modulator, which opens up a new way for GaN-based on-chip photonic integration on Si.</abstract><pub>IEEE</pub><doi>10.1109/JSTQE.2018.2815906</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-8109-4640</orcidid><orcidid>https://orcid.org/0000-0001-5495-2232</orcidid><orcidid>https://orcid.org/0000-0001-7968-3323</orcidid><orcidid>https://orcid.org/0000-0002-3206-6990</orcidid></addata></record> |
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| subjects | Absorption GaN integration Laser Lasers Modulation modulator photodetector Photodetectors Power generation Silicon System-on-chip |
| title | On-Chip Integration of GaN-Based Laser, Modulator, and Photodetector Grown on Si |
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