Theory of the single contact electron beam induced current effect
All publications on the single contact electron beam induced current (SC-EBIC) technique so far have been concerned with the application of the technique. This paper seeks to examine the theory behind the technique and supports it with experimental observation. It will be shown that the technique ca...
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| Veröffentlicht in: | IEEE transactions on electron devices 2000-04, Vol.47 (4), p.897-899 |
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| container_issue | 4 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 47 |
| creator | Ong, V.K.S. Lau, K.T. Ma, J.G. |
| description | All publications on the single contact electron beam induced current (SC-EBIC) technique so far have been concerned with the application of the technique. This paper seeks to examine the theory behind the technique and supports it with experimental observation. It will be shown that the technique can be used, not only on electron and ion beam machines, but also on any scanning equipment that is capable of generating electron-hole pairs within a semiconductor device, e.g., with the use of a fine laser beam. |
| doi_str_mv | 10.1109/16.831013 |
| format | Article |
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| ispartof | IEEE transactions on electron devices, 2000-04, Vol.47 (4), p.897-899 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_831013 |
| source | IEEE Electronic Library (IEL) |
| subjects | Contact Devices Documents Electron beam induced current Ion beams Laser beams Scanning Semiconductor devices |
| title | Theory of the single contact electron beam induced current effect |
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