Comprehensive Analysis of Distortion in the Passive FET Sample-and-Hold Circuit
Analysis simplified with circuit insights reveals the major sources of distortion in a passive FET-switch-based sampling circuit: 1) R_{\mathrm{\scriptscriptstyle ON}} -modulation; 2) turn-OFF-time instant; and 3) signal-dependent charge-injection. Explicit expressions for second- and third-order di...
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Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2018-04, Vol.65 (4), p.1157-1173 |
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creator | Iizuka, Tetsuya Ito, Takaaki Abidi, Asad A. |
description | Analysis simplified with circuit insights reveals the major sources of distortion in a passive FET-switch-based sampling circuit: 1) R_{\mathrm{\scriptscriptstyle ON}} -modulation; 2) turn-OFF-time instant; and 3) signal-dependent charge-injection. Explicit expressions for second- and third-order distortions advance intuitive understanding of the processes of distortion. Circuit simulations and measurement results establish the accuracy of the analysis. Since the three sources of distortion each have a unique dependence on circuit parameters and the input signal frequency, a systematic method is shown to optimize an S/H circuit for least distortion. |
doi_str_mv | 10.1109/TCSI.2018.2797987 |
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Explicit expressions for second- and third-order distortions advance intuitive understanding of the processes of distortion. Circuit simulations and measurement results establish the accuracy of the analysis. Since the three sources of distortion each have a unique dependence on circuit parameters and the input signal frequency, a systematic method is shown to optimize an S/H circuit for least distortion.</description><identifier>ISSN: 1549-8328</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2018.2797987</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analytical models ; Charge injection ; Circuits ; Distortion ; Field effect transistor ; Field effect transistors ; harmonic distortion ; Integrated circuit modeling ; intermodulation distortion ; Logic gates ; Nonlinear distortion ; ON resistance ; sample-and-hold ; sampling ; sampling timing ; Switches</subject><ispartof>IEEE transactions on circuits and systems. I, Regular papers, 2018-04, Vol.65 (4), p.1157-1173</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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I, Regular papers</title><addtitle>TCSI</addtitle><description>Analysis simplified with circuit insights reveals the major sources of distortion in a passive FET-switch-based sampling circuit: 1) R_{\mathrm{\scriptscriptstyle ON}} -modulation; 2) turn-OFF-time instant; and 3) signal-dependent charge-injection. Explicit expressions for second- and third-order distortions advance intuitive understanding of the processes of distortion. Circuit simulations and measurement results establish the accuracy of the analysis. Since the three sources of distortion each have a unique dependence on circuit parameters and the input signal frequency, a systematic method is shown to optimize an S/H circuit for least distortion.</description><subject>Analytical models</subject><subject>Charge injection</subject><subject>Circuits</subject><subject>Distortion</subject><subject>Field effect transistor</subject><subject>Field effect transistors</subject><subject>harmonic distortion</subject><subject>Integrated circuit modeling</subject><subject>intermodulation distortion</subject><subject>Logic gates</subject><subject>Nonlinear distortion</subject><subject>ON resistance</subject><subject>sample-and-hold</subject><subject>sampling</subject><subject>sampling timing</subject><subject>Switches</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMtqwzAQRUVpoWnaDyjdCLp2qof18DK4jwQCKSRdG8UeEQXHSiWnkL-v3ISu5sKcOwwHoUdKJpSS4mVdruYTRqieMFWoQqsrNKJC6IxoIq-HnBeZ5kzforsYd4SwgnA6QsvS7w8BttBF9wN42pn2FF3E3uJXF3sfeuc77DrcbwF_mvhHvb-t8crsDy1kpmuymW8bXLpQH11_j26saSM8XOYYfSW6nGWL5ce8nC6ymouizyAXtQLVMCtpeneTC70RXDWWg2TS1MJQ2dBcUsmAKbB8Y4VJ-8IazmWKY_R8vnsI_vsIsa92_hjS97FKFjjLlcxVouiZqoOPMYCtDsHtTThVlFSDt2rwNjR0dfGWOk_njgOAf15zohhT_BdIqWis</recordid><startdate>20180401</startdate><enddate>20180401</enddate><creator>Iizuka, Tetsuya</creator><creator>Ito, Takaaki</creator><creator>Abidi, Asad A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Iizuka, Tetsuya</au><au>Ito, Takaaki</au><au>Abidi, Asad A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comprehensive Analysis of Distortion in the Passive FET Sample-and-Hold Circuit</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2018-04-01</date><risdate>2018</risdate><volume>65</volume><issue>4</issue><spage>1157</spage><epage>1173</epage><pages>1157-1173</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>Analysis simplified with circuit insights reveals the major sources of distortion in a passive FET-switch-based sampling circuit: 1) R_{\mathrm{\scriptscriptstyle ON}} -modulation; 2) turn-OFF-time instant; and 3) signal-dependent charge-injection. 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subjects | Analytical models Charge injection Circuits Distortion Field effect transistor Field effect transistors harmonic distortion Integrated circuit modeling intermodulation distortion Logic gates Nonlinear distortion ON resistance sample-and-hold sampling sampling timing Switches |
title | Comprehensive Analysis of Distortion in the Passive FET Sample-and-Hold Circuit |
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