Gate Controlled Three-Terminal Metal Oxide Memristor

We discuss the theory, design, fabrication, and testing of a three-terminal memristor based on thin-film metal oxides. The fabricated device modifies a traditional SrTiO 3 thin-film memristor to include a third control terminal. The results show the device conductance is continuous over three orders...

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Veröffentlicht in:	IEEE electron device letters 2018-04, Vol.39 (4), p.500-503
Hauptverfasser:	Herrmann, Eric, Rush, Andrew, Bailey, Tony, Jha, Rashmi
Format:	Artikel
Sprache:	eng
Schlagworte:	Electrodes Insulators Logic gates Memristors neuromorphics nonvolatile memory resistive RAM Semiconductor device measurement Thin film devices thin film transistors Tin
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