Enhanced-Selectivity High-Linearity Low-Noise Mixer-First Receiver With Complex Pole Pair Due to Capacitive Positive Feedback
A mixer-first receiver (RX) with enhanced selectivity and high dynamic range is proposed, targeting to remove surface acoustic-wave-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband (BB) amplifier serves as a blocker bypassing path,...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2018-05, Vol.53 (5), p.1348-1360 |
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| container_end_page | 1360 |
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| container_issue | 5 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 53 |
| creator | Lien, Yuan-Ching Klumperink, Eric A. M. Tenbroek, Bernard Strange, Jon Nauta, Bram |
| description | A mixer-first receiver (RX) with enhanced selectivity and high dynamic range is proposed, targeting to remove surface acoustic-wave-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband (BB) amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the BB amplifier, which is upconverted to the RF port to obtain steeper RF bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes RX performance. A prototype chip fabricated in 45-nm partially depleted silicon on insulator (SOI) technology achieves high out-of-band linearity (input-referred third-order intercept point (IIP3) = 39 dBm and input-referred second-order intercept point (IIP2) = 88 dB) combined with sub-3-dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz. |
| doi_str_mv | 10.1109/JSSC.2018.2791490 |
| format | Article |
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A prototype chip fabricated in 45-nm partially depleted silicon on insulator (SOI) technology achieves high out-of-band linearity (input-referred third-order intercept point (IIP3) = 39 dBm and input-referred second-order intercept point (IIP2) = 88 dB) combined with sub-3-dB noise figure. 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(IEEE) 2018</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-4775d7eff7968f7f355c8a060d2e348766938255406d94cfec7aa4b0659db7033</citedby><cites>FETCH-LOGICAL-c336t-4775d7eff7968f7f355c8a060d2e348766938255406d94cfec7aa4b0659db7033</cites><orcidid>0000-0002-6927-9308 ; 0000-0003-2487-8996 ; 0000-0001-6790-5873</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8281459$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8281459$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lien, Yuan-Ching</creatorcontrib><creatorcontrib>Klumperink, Eric A. M.</creatorcontrib><creatorcontrib>Tenbroek, Bernard</creatorcontrib><creatorcontrib>Strange, Jon</creatorcontrib><creatorcontrib>Nauta, Bram</creatorcontrib><title>Enhanced-Selectivity High-Linearity Low-Noise Mixer-First Receiver With Complex Pole Pair Due to Capacitive Positive Feedback</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A mixer-first receiver (RX) with enhanced selectivity and high dynamic range is proposed, targeting to remove surface acoustic-wave-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband (BB) amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the BB amplifier, which is upconverted to the RF port to obtain steeper RF bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes RX performance. A prototype chip fabricated in 45-nm partially depleted silicon on insulator (SOI) technology achieves high out-of-band linearity (input-referred third-order intercept point (IIP3) = 39 dBm and input-referred second-order intercept point (IIP2) = 88 dB) combined with sub-3-dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.</description><subject><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">N -path filter</subject><subject>Acoustic noise</subject><subject>Amplifiers</subject><subject>Bandpass</subject><subject>Bandpass filters</subject><subject>block rejection</subject><subject>Capacitors</subject><subject>CMOS</subject><subject>compression point</subject><subject>Desensitization</subject><subject>Frequencies</subject><subject>frequency-division duplex (FDD)</subject><subject>high linearity</subject><subject>Impedance</subject><subject>input-referred second-order intercept point (IIP2)</subject><subject>input-referred third-order intercept point (IIP3)</subject><subject>Linearity</subject><subject>low noise</subject><subject>mixer first</subject><subject>Mixers</subject><subject>Negative feedback</subject><subject>Noise levels</subject><subject>passive mixer</subject><subject>Positive feedback</subject><subject>Radio frequency</subject><subject>receiver (RX)</subject><subject>Receivers</subject><subject>Selectivity</subject><subject>Surface acoustic waves</subject><subject>surface acoustic-wave (SAW) less</subject><subject>tunable</subject><subject>Wave filters</subject><subject>wideband</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEtPAjEUhRujifj4AcZNE9fFdtpO26UZRTT4iGh0NymdO1IEiu2AuvC_OwTi6r7OOTf5EDphtMsYNee3w2HRzSjT3UwZJgzdQR0mpSZM8bdd1KHtiZiM0n10kNKkHYXQrIN-r-ZjO3dQkSFMwTV-5Zsf3PfvYzLwc7BxPQ7CF7kPPgG-898QSc_H1OAncOBXEPGrb8a4CLPFFL7xY5gCfrQ-4ssl4Cbgwi6s821wuw5p0_QAqpF1H0dor7bTBMfbeoheelfPRZ8MHq5viosBcZznDRFKyUpBXSuT61rVXEqnLc1plQEXWuW54TqTUtC8MsLV4JS1YkRzaaqRopwforNN7iKGzyWkppyEZZy3L8uM8hagkFq1KrZRuRhSilCXi-hnNv6UjJZryuWacrmmXG4pt57TjccDwL9eZ5oJafgfljp4yw</recordid><startdate>20180501</startdate><enddate>20180501</enddate><creator>Lien, Yuan-Ching</creator><creator>Klumperink, Eric A. 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M. ; Tenbroek, Bernard ; Strange, Jon ; Nauta, Bram</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-4775d7eff7968f7f355c8a060d2e348766938255406d94cfec7aa4b0659db7033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">N -path filter</topic><topic>Acoustic noise</topic><topic>Amplifiers</topic><topic>Bandpass</topic><topic>Bandpass filters</topic><topic>block rejection</topic><topic>Capacitors</topic><topic>CMOS</topic><topic>compression point</topic><topic>Desensitization</topic><topic>Frequencies</topic><topic>frequency-division duplex (FDD)</topic><topic>high linearity</topic><topic>Impedance</topic><topic>input-referred second-order intercept point (IIP2)</topic><topic>input-referred third-order intercept point (IIP3)</topic><topic>Linearity</topic><topic>low noise</topic><topic>mixer first</topic><topic>Mixers</topic><topic>Negative feedback</topic><topic>Noise levels</topic><topic>passive mixer</topic><topic>Positive feedback</topic><topic>Radio frequency</topic><topic>receiver (RX)</topic><topic>Receivers</topic><topic>Selectivity</topic><topic>Surface acoustic waves</topic><topic>surface acoustic-wave (SAW) less</topic><topic>tunable</topic><topic>Wave filters</topic><topic>wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lien, Yuan-Ching</creatorcontrib><creatorcontrib>Klumperink, Eric A. M.</creatorcontrib><creatorcontrib>Tenbroek, Bernard</creatorcontrib><creatorcontrib>Strange, Jon</creatorcontrib><creatorcontrib>Nauta, Bram</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lien, Yuan-Ching</au><au>Klumperink, Eric A. M.</au><au>Tenbroek, Bernard</au><au>Strange, Jon</au><au>Nauta, Bram</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced-Selectivity High-Linearity Low-Noise Mixer-First Receiver With Complex Pole Pair Due to Capacitive Positive Feedback</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2018-05-01</date><risdate>2018</risdate><volume>53</volume><issue>5</issue><spage>1348</spage><epage>1360</epage><pages>1348-1360</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A mixer-first receiver (RX) with enhanced selectivity and high dynamic range is proposed, targeting to remove surface acoustic-wave-filters in mobile phones and cover all frequency bands up to 6 GHz. Capacitive negative feedback across the baseband (BB) amplifier serves as a blocker bypassing path, while an extra capacitive positive feedback path offers further blocker rejection. This combination of feedback paths synthesizes a complex pole pair at the input of the BB amplifier, which is upconverted to the RF port to obtain steeper RF bandpass filter roll-off and reduced distortion. This paper explains the circuit principle and analyzes RX performance. A prototype chip fabricated in 45-nm partially depleted silicon on insulator (SOI) technology achieves high out-of-band linearity (input-referred third-order intercept point (IIP3) = 39 dBm and input-referred second-order intercept point (IIP2) = 88 dB) combined with sub-3-dB noise figure. Desensitization due to a 0-dBm blocker is only 2.2 dB at 1.4 GHz.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2018.2791490</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0002-6927-9308</orcidid><orcidid>https://orcid.org/0000-0003-2487-8996</orcidid><orcidid>https://orcid.org/0000-0001-6790-5873</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | IEEE journal of solid-state circuits, 2018-05, Vol.53 (5), p.1348-1360 |
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| subjects | <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">N -path filter Acoustic noise Amplifiers Bandpass Bandpass filters block rejection Capacitors CMOS compression point Desensitization Frequencies frequency-division duplex (FDD) high linearity Impedance input-referred second-order intercept point (IIP2) input-referred third-order intercept point (IIP3) Linearity low noise mixer first Mixers Negative feedback Noise levels passive mixer Positive feedback Radio frequency receiver (RX) Receivers Selectivity Surface acoustic waves surface acoustic-wave (SAW) less tunable Wave filters wideband |
| title | Enhanced-Selectivity High-Linearity Low-Noise Mixer-First Receiver With Complex Pole Pair Due to Capacitive Positive Feedback |
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