New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs

Anomalous transconductance with nonmono- tonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the tota...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-02, Vol.65 (2), p.463-469
Hauptverfasser:	Lin, Yen-Kai, Kushwaha, Pragya, Duarte, Juan Pablo, Chang, Huan-Lin, Agarwal, Harshit, Khandelwal, Sourabh, Sachid, Angada B., Harter, Michael, Watts, Josef, Chauhan, Yogesh Singh, Salahuddin, Sayeef, Hu, Chenming
Format:	Artikel
Sprache:	eng
Schlagworte:	BSIM-IMG Electric potential fully depleted silicon-on-insulator (FDSOI) gate oxide image sensor Logic gates mobility MOSFET Semiconductor device modeling Silicon-on-insulator Threshold voltage Transconductance
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