Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure
Narrow-channel n-MOSFETs with recessed LOCOS (R-LOCOS) isolation structure exhibit less hot carrier-induced degradation than wide-channel n-MOSFETs, but the degradation mechanism of both devices is the same. This new finding Is explained by the fact that in deep submicron MOSFETs with ultra-thin gat...
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| Veröffentlicht in: | IEEE electron device letters 2000-03, Vol.21 (3), p.130-132 |
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| container_title | IEEE electron device letters |
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| creator | Yue, Jeffrey Mun Pun Chim, Wai Kin Cho, Byung Jin Chan, Daniel Sin Hung Qin, Wei Han Kim, Young-Bog Jang, Se-Aug Yeo, In-Seok |
| description | Narrow-channel n-MOSFETs with recessed LOCOS (R-LOCOS) isolation structure exhibit less hot carrier-induced degradation than wide-channel n-MOSFETs, but the degradation mechanism of both devices is the same. This new finding Is explained by the fact that in deep submicron MOSFETs with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect. |
| doi_str_mv | 10.1109/55.823578 |
| format | Article |
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This new finding Is explained by the fact that in deep submicron MOSFETs with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect.</description><subject>Carriers</subject><subject>CMOS technology</subject><subject>Degradation</subject><subject>Devices</subject><subject>Electric fields</subject><subject>Electrodes</subject><subject>Gates</subject><subject>Hot carrier effects</subject><subject>Hot carriers</subject><subject>MOSFET circuits</subject><subject>MOSFETs</subject><subject>Oxidation</subject><subject>Oxides</subject><subject>Silicon</subject><subject>Stress</subject><subject>Stresses</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0T1vFDEQBmALgcQRKGipLApQCicef623RCcgSIeuSFKvHHuWONqzg72riH8fnzaiSAHVWDPPvJI1hLwHfgbA-3Otz6yQurMvyAa0toxrI1-SDe8UMAncvCZvar3jHJTq1Ibkizwz70qJWGjAX8UFN8ec6AH9rUuxHmhMNDWQHxh1KdCHGJAdZwknmtjP_eW3r1e1tedbWtBjrRjobr_dX9JY87Sm1bksfl4KviWvRjdVfPdUT8h1W99esN3--4_tlx3z0nQzg37sRidFUEZrMML5m54HI0JnRoOivfrAbwBHM9rR9yigVXTAue0QtJcn5POae1_y7wXrPBxi9ThNLmFe6tBDSwYjdZOf_imFlWCFVf-HnVZa8WPix2fwLi8lte8OfW97JUDLhk5X5EuuteA43Jd4cOXPAHw4nnLQelhP2eyH1UZE_Oueho-BZ5hz</recordid><startdate>20000301</startdate><enddate>20000301</enddate><creator>Yue, Jeffrey Mun Pun</creator><creator>Chim, Wai Kin</creator><creator>Cho, Byung Jin</creator><creator>Chan, Daniel Sin Hung</creator><creator>Qin, Wei Han</creator><creator>Kim, Young-Bog</creator><creator>Jang, Se-Aug</creator><creator>Yeo, In-Seok</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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This new finding Is explained by the fact that in deep submicron MOSFETs with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/55.823578</doi><tpages>3</tpages></addata></record> |
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| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Carriers CMOS technology Degradation Devices Electric fields Electrodes Gates Hot carrier effects Hot carriers MOSFET circuits MOSFETs Oxidation Oxides Silicon Stress Stresses Voltage |
| title | Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure |
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