Photoresist integrity and outgassing effects during plasma immersion ion implantation

Plasma immersion ion implantation (PIII) has been evaluated for process compatibility with photoresists. The effects of non-mass-separated ion implantation into bare Si, soft-baked (SE), hardbaked (HE), and UV/baked (UVB) patterned photoresist wafers are discussed. Outgassing of the photoresist can...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bernstein, J.D., Whiteside, D.M., Rendon, M.J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Coatings Filtering Implants Ion implantation Magnetic analysis Magnetic separation Plasma immersion ion implantation Plasma measurements Resists Voltage
Online-Zugang:	Volltext bestellen
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