Design and Analysis of 2.4 GHz 30~\mu \text CMOS LNAs for Wearable WSN Applications
To meet the requirements of wearable wireless sensor networks, the power dissipation of the RF transceiver has to be drastically reduced. This paper presents two ultra-low power low noise amplifiers (LNAs) with RF performance exceeding the requirement of the intended application. In the first LNA, b...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2018-03, Vol.65 (3), p.891-903 |
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| container_title | IEEE transactions on circuits and systems. I, Regular papers |
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| creator | Kargaran, Ehsan Manstretta, Danilo Castello, Rinaldo |
| description | To meet the requirements of wearable wireless sensor networks, the power dissipation of the RF transceiver has to be drastically reduced. This paper presents two ultra-low power low noise amplifiers (LNAs) with RF performance exceeding the requirement of the intended application. In the first LNA, by reusing the current several times and employing passive gm boosting, the LNA input impedance is reduced by a factor of 24 compared with a single transistor using the same current. The feasibility of passive gm boosting for designing an ultra-low supply voltage LNA is also investigated. Limitations of both LNAs, including NF, non-linearity, and stability in a 40-nm CMOS technology are also investigated. The proposed LNAs consume only 30~\mu \text{W} of power, operate with 0.8 V and 0.18 V and show NF of 3.3 and 5.2 dB, respectively. Using a widely accepted figure-of-merit for LNAs, the proposed circuit is almost three times better than the best previously reported sub-mW LNA. |
| doi_str_mv | 10.1109/TCSI.2017.2771940 |
| format | Article |
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This paper presents two ultra-low power low noise amplifiers (LNAs) with RF performance exceeding the requirement of the intended application. In the first LNA, by reusing the current several times and employing passive gm boosting, the LNA input impedance is reduced by a factor of 24 compared with a single transistor using the same current. The feasibility of passive gm boosting for designing an ultra-low supply voltage LNA is also investigated. Limitations of both LNAs, including NF, non-linearity, and stability in a 40-nm CMOS technology are also investigated. The proposed LNAs consume only <inline-formula> <tex-math notation="LaTeX">30~\mu \text{W} </tex-math></inline-formula> of power, operate with 0.8 V and 0.18 V and show NF of 3.3 and 5.2 dB, respectively. 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I, Regular papers</title><addtitle>TCSI</addtitle><description>To meet the requirements of wearable wireless sensor networks, the power dissipation of the RF transceiver has to be drastically reduced. This paper presents two ultra-low power low noise amplifiers (LNAs) with RF performance exceeding the requirement of the intended application. In the first LNA, by reusing the current several times and employing passive gm boosting, the LNA input impedance is reduced by a factor of 24 compared with a single transistor using the same current. The feasibility of passive gm boosting for designing an ultra-low supply voltage LNA is also investigated. Limitations of both LNAs, including NF, non-linearity, and stability in a 40-nm CMOS technology are also investigated. The proposed LNAs consume only <inline-formula> <tex-math notation="LaTeX">30~\mu \text{W} </tex-math></inline-formula> of power, operate with 0.8 V and 0.18 V and show NF of 3.3 and 5.2 dB, respectively. Using a widely accepted figure-of-merit for LNAs, the proposed circuit is almost three times better than the best previously reported sub-mW LNA.</description><subject>CMOS</subject><subject>current reuse</subject><subject>Gain</subject><subject>gm-boosting</subject><subject>Impedance</subject><subject>Input impedance</subject><subject>Linearity</subject><subject>Low noise</subject><subject>low noise figure</subject><subject>Noise measurement</subject><subject>Noise reduction</subject><subject>Power consumption</subject><subject>Receivers</subject><subject>Remote sensors</subject><subject>Topology</subject><subject>Transistors</subject><subject>Ultra low power</subject><subject>ultra-low voltage</subject><subject>Wearable technology</subject><subject>Wireless sensor networks</subject><subject>WSN</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AURYMoWKs_QNwMuE6cN5P5WoaobaG2i1S6KYRpMiMpMYkzKVgX_nYbWly9uzj3wjtBcA84AsDqaZVms4hgEBERAlSML4IRMCZDLDG_HHKsQkmJvA5uvN9hTBSmMAqyZ-OrjwbppkRJo-uDrzxqLSJRjCbTH0Tx7-Zzjza9-e5R-rbM0HyReGRbh9ZGO72tDVpnC5R0XV0Vuq_axt8GV1bX3tyd7zh4f31ZpdNwvpzM0mQeFkAlCzkXPFaagxWMFQLAxCUoQSUwQY2iVlmwsVJqqzjFpS6AaKoY15QIiUtGx8Hjabdz7dfe-D7ftXt3fMLnBGNOWMzVQMGJKlzrvTM271z1qd0hB5wP7vLBXT64y8_ujp2HU6cyxvzzEgiXTNE_Zh1l9g</recordid><startdate>201803</startdate><enddate>201803</enddate><creator>Kargaran, Ehsan</creator><creator>Manstretta, Danilo</creator><creator>Castello, Rinaldo</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kargaran, Ehsan</au><au>Manstretta, Danilo</au><au>Castello, Rinaldo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and Analysis of 2.4 GHz 30~\mu \text CMOS LNAs for Wearable WSN Applications</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2018-03</date><risdate>2018</risdate><volume>65</volume><issue>3</issue><spage>891</spage><epage>903</epage><pages>891-903</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract>To meet the requirements of wearable wireless sensor networks, the power dissipation of the RF transceiver has to be drastically reduced. This paper presents two ultra-low power low noise amplifiers (LNAs) with RF performance exceeding the requirement of the intended application. 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| ispartof | IEEE transactions on circuits and systems. I, Regular papers, 2018-03, Vol.65 (3), p.891-903 |
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| source | IEEE Electronic Library (IEL) |
| subjects | CMOS current reuse Gain gm-boosting Impedance Input impedance Linearity Low noise low noise figure Noise measurement Noise reduction Power consumption Receivers Remote sensors Topology Transistors Ultra low power ultra-low voltage Wearable technology Wireless sensor networks WSN |
| title | Design and Analysis of 2.4 GHz 30~\mu \text CMOS LNAs for Wearable WSN Applications |
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