Scaling Effects on Single-Event Transients in InGaAs FinFETs
The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive vo...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2018-01, Vol.65 (1), p.296-303 |
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| creator | Gong, Huiqi Ni, Kai Zhang, En Xia Sternberg, Andrew L. Kozub, John A. Ryder, Kaitlyn L. Keller, Ryan F. Ryder, Landen D. Weiss, Sharon M. Weller, Robert A. Alles, Michael L. Reed, Robert A. Fleetwood, Daniel M. Schrimpf, Ronald D. Vardi, Alon del Alamo, Jesus A. |
| description | The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with different fin widths, but more charge is collected by wider fin devices due to the larger channel volume. Charge accumulated in the buffer and substrate layers modulates the body potential, altering the degree of back-gate control, leading to additional effects associated with charge accumulation in wider fin devices. Optical simulations for a model system suggest that optical phenomena in the fins should be considered for laser testing. These include optical interference, plasmonic enhancement at the metal-dielectric interfaces, and enhanced electron-hole pair recombination due to multiple reflections in multigate devices with nanoscale dimensions. |
| doi_str_mv | 10.1109/TNS.2017.2778640 |
| format | Article |
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Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with different fin widths, but more charge is collected by wider fin devices due to the larger channel volume. Charge accumulated in the buffer and substrate layers modulates the body potential, altering the degree of back-gate control, leading to additional effects associated with charge accumulation in wider fin devices. Optical simulations for a model system suggest that optical phenomena in the fins should be considered for laser testing. These include optical interference, plasmonic enhancement at the metal-dielectric interfaces, and enhanced electron-hole pair recombination due to multiple reflections in multigate devices with nanoscale dimensions.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2017.2778640</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charge collection ; Charge density ; Computer simulation ; fin width ; FinFETs ; Fins ; heavy ion ; Indium gallium arsenide ; InGaAs ; Interfaces ; Ion irradiation ; Ions ; Irradiation ; Logic gates ; MOSFETs ; pulsed laser ; Quantum wells ; Radiation effects ; Recombination ; Scaling ; scaling effects ; Semiconductor devices ; single-event transient (SET) ; Substrates ; technology computer-aided design (TCAD) ; Transient analysis</subject><ispartof>IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.296-303</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-41d9e6ced9cd4fbf07762cc77d04ee870665912376398b20d755c06e97bc14433</citedby><cites>FETCH-LOGICAL-c333t-41d9e6ced9cd4fbf07762cc77d04ee870665912376398b20d755c06e97bc14433</cites><orcidid>0000-0002-2014-3637 ; 0000-0002-3119-0850 ; 0000-0003-4257-7142 ; 0000-0001-9125-4118 ; 0000-0001-7419-2701 ; 0000-0002-3628-3431 ; 0000-0003-4003-7863 ; 0000-0002-2280-219X ; 0000-0002-1116-8509 ; 0000-0002-8021-2411</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8123833$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,782,786,798,27933,27934,54767</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8123833$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gong, Huiqi</creatorcontrib><creatorcontrib>Ni, Kai</creatorcontrib><creatorcontrib>Zhang, En Xia</creatorcontrib><creatorcontrib>Sternberg, Andrew L.</creatorcontrib><creatorcontrib>Kozub, John A.</creatorcontrib><creatorcontrib>Ryder, Kaitlyn L.</creatorcontrib><creatorcontrib>Keller, Ryan F.</creatorcontrib><creatorcontrib>Ryder, Landen D.</creatorcontrib><creatorcontrib>Weiss, Sharon M.</creatorcontrib><creatorcontrib>Weller, Robert A.</creatorcontrib><creatorcontrib>Alles, Michael L.</creatorcontrib><creatorcontrib>Reed, Robert A.</creatorcontrib><creatorcontrib>Fleetwood, Daniel M.</creatorcontrib><creatorcontrib>Schrimpf, Ronald D.</creatorcontrib><creatorcontrib>Vardi, Alon</creatorcontrib><creatorcontrib>del Alamo, Jesus A.</creatorcontrib><title>Scaling Effects on Single-Event Transients in InGaAs FinFETs</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with different fin widths, but more charge is collected by wider fin devices due to the larger channel volume. Charge accumulated in the buffer and substrate layers modulates the body potential, altering the degree of back-gate control, leading to additional effects associated with charge accumulation in wider fin devices. Optical simulations for a model system suggest that optical phenomena in the fins should be considered for laser testing. These include optical interference, plasmonic enhancement at the metal-dielectric interfaces, and enhanced electron-hole pair recombination due to multiple reflections in multigate devices with nanoscale dimensions.</description><subject>Charge collection</subject><subject>Charge density</subject><subject>Computer simulation</subject><subject>fin width</subject><subject>FinFETs</subject><subject>Fins</subject><subject>heavy ion</subject><subject>Indium gallium arsenide</subject><subject>InGaAs</subject><subject>Interfaces</subject><subject>Ion irradiation</subject><subject>Ions</subject><subject>Irradiation</subject><subject>Logic gates</subject><subject>MOSFETs</subject><subject>pulsed laser</subject><subject>Quantum wells</subject><subject>Radiation effects</subject><subject>Recombination</subject><subject>Scaling</subject><subject>scaling effects</subject><subject>Semiconductor devices</subject><subject>single-event transient (SET)</subject><subject>Substrates</subject><subject>technology computer-aided design (TCAD)</subject><subject>Transient analysis</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEQxYMoWKt3wUvA89bJ5hu8lNLWQtFD6zlss7OypWZrshX875vS4mk-eG_m8SPkkcGIMbAv6_fVqASmR6XWRgm4IgMmpSmY1OaaDACYKayw9pbcpbTNo5AgB-R15atdG77otGnQ94l2ga7yvMNi-ouhp-tYhdTmLtE20EWYV-NEZ22YTdfpntw01S7hw6UOyWdeT96K5cd8MRkvC8857wvBaovKY219LZpNA1qr0nutaxCIRoNS0rKSa8Wt2ZRQayk9KLR645kQnA_J8_nuPnY_B0y923aHGPJLx6wxurTMiKyCs8rHLqWIjdvH9ruKf46BOzFymZE7MXIXRtnydLa0iPgvNzmLycmPtqZf_g</recordid><startdate>201801</startdate><enddate>201801</enddate><creator>Gong, Huiqi</creator><creator>Ni, Kai</creator><creator>Zhang, En Xia</creator><creator>Sternberg, Andrew L.</creator><creator>Kozub, John A.</creator><creator>Ryder, Kaitlyn L.</creator><creator>Keller, Ryan F.</creator><creator>Ryder, Landen D.</creator><creator>Weiss, Sharon M.</creator><creator>Weller, Robert A.</creator><creator>Alles, Michael L.</creator><creator>Reed, Robert A.</creator><creator>Fleetwood, Daniel M.</creator><creator>Schrimpf, Ronald D.</creator><creator>Vardi, Alon</creator><creator>del Alamo, Jesus A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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science</jtitle><stitle>TNS</stitle><date>2018-01</date><risdate>2018</risdate><volume>65</volume><issue>1</issue><spage>296</spage><epage>303</epage><pages>296-303</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The single-event-transient response of InGaAs FinFETs with different fin widths is examined using pulsed-laser and heavy-ion irradiation. Devices with wider fins collect more charge in both environments. Quantum-well structures confine charge collection in the channel, and determine the sensitive volume. Simulations show that the charge density produced by irradiation is similar for devices with different fin widths, but more charge is collected by wider fin devices due to the larger channel volume. Charge accumulated in the buffer and substrate layers modulates the body potential, altering the degree of back-gate control, leading to additional effects associated with charge accumulation in wider fin devices. Optical simulations for a model system suggest that optical phenomena in the fins should be considered for laser testing. 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| subjects | Charge collection Charge density Computer simulation fin width FinFETs Fins heavy ion Indium gallium arsenide InGaAs Interfaces Ion irradiation Ions Irradiation Logic gates MOSFETs pulsed laser Quantum wells Radiation effects Recombination Scaling scaling effects Semiconductor devices single-event transient (SET) Substrates technology computer-aided design (TCAD) Transient analysis |
| title | Scaling Effects on Single-Event Transients in InGaAs FinFETs |
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