Beam characterizations of mass separated, low-energy positive and negative ions deposition apparatus
The authors study properties of positive and negative ion beams mainly focused on the characterizations of the ion beam energy on a newly developed apparatus for isotopically mass separated, low-energy, positive and negative ions deposition. In the positive ion beam line, a plasma potential inside t...
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| creator | Tsubouchi, N. Horino, Y. Wada, M. Oomori, H. |
| description | The authors study properties of positive and negative ion beams mainly focused on the characterizations of the ion beam energy on a newly developed apparatus for isotopically mass separated, low-energy, positive and negative ions deposition. In the positive ion beam line, a plasma potential inside the ion source was about 50 to 100 V, depending on a gas pressure, a magnetron power and an applied magnetic field. It decreased with the increasing gas pressure and with decreasing the microwave power and the magnetic field. The energy spread (full width at half maximum) was about 8-10 eV almost independent of various parameters, for example, the gas pressure, ion species, etc. The fluctuation of the beam energy was about a few eV during ten hours. |
| doi_str_mv | 10.1109/IIT.1999.812125 |
| format | Conference Proceeding |
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In the positive ion beam line, a plasma potential inside the ion source was about 50 to 100 V, depending on a gas pressure, a magnetron power and an applied magnetic field. It decreased with the increasing gas pressure and with decreasing the microwave power and the magnetic field. The energy spread (full width at half maximum) was about 8-10 eV almost independent of various parameters, for example, the gas pressure, ion species, etc. The fluctuation of the beam energy was about a few eV during ten hours.</description><identifier>ISBN: 078034538X</identifier><identifier>ISBN: 9780780345386</identifier><identifier>DOI: 10.1109/IIT.1999.812125</identifier><language>eng</language><publisher>IEEE</publisher><subject>Fault location ; Fluctuations ; Ion beams ; Ion sources ; Magnetic fields ; Magnetic separation ; Physics ; Plasma properties ; Plasma sources ; Sputtering</subject><ispartof>1998 International Conference on Ion Implantation Technology. Proceedings (Cat. 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No.98EX144)</title><addtitle>IIT</addtitle><description>The authors study properties of positive and negative ion beams mainly focused on the characterizations of the ion beam energy on a newly developed apparatus for isotopically mass separated, low-energy, positive and negative ions deposition. In the positive ion beam line, a plasma potential inside the ion source was about 50 to 100 V, depending on a gas pressure, a magnetron power and an applied magnetic field. It decreased with the increasing gas pressure and with decreasing the microwave power and the magnetic field. The energy spread (full width at half maximum) was about 8-10 eV almost independent of various parameters, for example, the gas pressure, ion species, etc. The fluctuation of the beam energy was about a few eV during ten hours.</description><subject>Fault location</subject><subject>Fluctuations</subject><subject>Ion beams</subject><subject>Ion sources</subject><subject>Magnetic fields</subject><subject>Magnetic separation</subject><subject>Physics</subject><subject>Plasma properties</subject><subject>Plasma sources</subject><subject>Sputtering</subject><isbn>078034538X</isbn><isbn>9780780345386</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUEtLxDAYDIigrnsWPOUH2JpHs0mOuvgoLHjpwdvyNfmyRrYPmqqsv97SOpdhGGZghpAbznLOmb0vyyrn1trccMGFOiNXTBsmCyXN-wVZp_TJJkirpOKXxD8iNNR9wABuxCH-whi7NtEu0AZSogn7yRrR39Fj95Nhi8PhRPsuxTF-I4XW0xYPMIs56HExu5ZCP2e_0jU5D3BMuP7nFamen6rta7Z7eym3D7ssGj1mtvDChCIUliGgZEJopYMIsrC8xqBdqNEzjs4ZY5Rwm42sp1mISkNtuJQrcrvURkTc90NsYDjtlxvkH3HtVWc</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Tsubouchi, N.</creator><creator>Horino, Y.</creator><creator>Wada, M.</creator><creator>Oomori, H.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1999</creationdate><title>Beam characterizations of mass separated, low-energy positive and negative ions deposition apparatus</title><author>Tsubouchi, N. ; Horino, Y. ; Wada, M. ; Oomori, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-94d28f4f490eae3022757f2f3491bef7cfbed01ecc88852c663b345ee57ab8133</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Fault location</topic><topic>Fluctuations</topic><topic>Ion beams</topic><topic>Ion sources</topic><topic>Magnetic fields</topic><topic>Magnetic separation</topic><topic>Physics</topic><topic>Plasma properties</topic><topic>Plasma sources</topic><topic>Sputtering</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsubouchi, N.</creatorcontrib><creatorcontrib>Horino, Y.</creatorcontrib><creatorcontrib>Wada, M.</creatorcontrib><creatorcontrib>Oomori, H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsubouchi, N.</au><au>Horino, Y.</au><au>Wada, M.</au><au>Oomori, H.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Beam characterizations of mass separated, low-energy positive and negative ions deposition apparatus</atitle><btitle>1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)</btitle><stitle>IIT</stitle><date>1999</date><risdate>1999</risdate><volume>1</volume><spage>350</spage><epage>353 vol.1</epage><pages>350-353 vol.1</pages><isbn>078034538X</isbn><isbn>9780780345386</isbn><abstract>The authors study properties of positive and negative ion beams mainly focused on the characterizations of the ion beam energy on a newly developed apparatus for isotopically mass separated, low-energy, positive and negative ions deposition. In the positive ion beam line, a plasma potential inside the ion source was about 50 to 100 V, depending on a gas pressure, a magnetron power and an applied magnetic field. It decreased with the increasing gas pressure and with decreasing the microwave power and the magnetic field. The energy spread (full width at half maximum) was about 8-10 eV almost independent of various parameters, for example, the gas pressure, ion species, etc. The fluctuation of the beam energy was about a few eV during ten hours.</abstract><pub>IEEE</pub><doi>10.1109/IIT.1999.812125</doi></addata></record> |
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| identifier | ISBN: 078034538X |
| ispartof | 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.350-353 vol.1 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Fault location Fluctuations Ion beams Ion sources Magnetic fields Magnetic separation Physics Plasma properties Plasma sources Sputtering |
| title | Beam characterizations of mass separated, low-energy positive and negative ions deposition apparatus |
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