Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET

Gate-grounded tunnel field-effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. It has been reported that two current paths exist when the ggTFET is turned on under the ESD events. In this letter, the double current path p...

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Veröffentlicht in:	IEEE electron device letters 2018-01, Vol.39 (1), p.103-106
Hauptverfasser:	Yang, Zhaonian, Zhang, Yue, Yang, Yuan, Yu, Ningmei
Format:	Artikel
Sprache:	eng
Schlagworte:	Band-to-band tunneling (BTBT) Circuit protection Current density double current path Electric potential electrostatic discharge (ESD) Electrostatic discharges Field effect transistors gate grounded tunnel field-effect transistor (ggTFET) Heating systems Integrated circuits Lattices Logic gates Semiconductor devices Static electricity TFETs
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