Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET
Gate-grounded tunnel field-effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. It has been reported that two current paths exist when the ggTFET is turned on under the ESD events. In this letter, the double current path p...
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| Veröffentlicht in: | IEEE electron device letters 2018-01, Vol.39 (1), p.103-106 |
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| creator | Yang, Zhaonian Zhang, Yue Yang, Yuan Yu, Ningmei |
| description | Gate-grounded tunnel field-effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. It has been reported that two current paths exist when the ggTFET is turned on under the ESD events. In this letter, the double current path phenomenon in ggTFETs is further investigated using TCAD simulation. It is found that the upper path is a hole current path, while the lower path mainly consists of electrons, and the grounded gate is a major factor that influences the double current path phenomenon. The heat and lattice temperature distributions in ggTFETs are also discussed. |
| doi_str_mv | 10.1109/LED.2017.2778044 |
| format | Article |
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It has been reported that two current paths exist when the ggTFET is turned on under the ESD events. In this letter, the double current path phenomenon in ggTFETs is further investigated using TCAD simulation. It is found that the upper path is a hole current path, while the lower path mainly consists of electrons, and the grounded gate is a major factor that influences the double current path phenomenon. The heat and lattice temperature distributions in ggTFETs are also discussed.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2017.2778044</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Band-to-band tunneling (BTBT) ; Circuit protection ; Current density ; double current path ; Electric potential ; electrostatic discharge (ESD) ; Electrostatic discharges ; Field effect transistors ; gate grounded tunnel field-effect transistor (ggTFET) ; Heating systems ; Integrated circuits ; Lattices ; Logic gates ; Semiconductor devices ; Static electricity ; TFETs</subject><ispartof>IEEE electron device letters, 2018-01, Vol.39 (1), p.103-106</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-c99a71073490ce98ac309770c1a0e8489cf8c1e2ebd79aed3da811c0931733123</citedby><cites>FETCH-LOGICAL-c291t-c99a71073490ce98ac309770c1a0e8489cf8c1e2ebd79aed3da811c0931733123</cites><orcidid>0000-0002-3425-3511 ; 0000-0001-6389-7693 ; 0000-0002-4977-7510 ; 0000-0002-1035-1491</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8120152$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8120152$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yang, Zhaonian</creatorcontrib><creatorcontrib>Zhang, Yue</creatorcontrib><creatorcontrib>Yang, Yuan</creatorcontrib><creatorcontrib>Yu, Ningmei</creatorcontrib><title>Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Gate-grounded tunnel field-effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. It has been reported that two current paths exist when the ggTFET is turned on under the ESD events. In this letter, the double current path phenomenon in ggTFETs is further investigated using TCAD simulation. It is found that the upper path is a hole current path, while the lower path mainly consists of electrons, and the grounded gate is a major factor that influences the double current path phenomenon. The heat and lattice temperature distributions in ggTFETs are also discussed.</description><subject>Band-to-band tunneling (BTBT)</subject><subject>Circuit protection</subject><subject>Current density</subject><subject>double current path</subject><subject>Electric potential</subject><subject>electrostatic discharge (ESD)</subject><subject>Electrostatic discharges</subject><subject>Field effect transistors</subject><subject>gate grounded tunnel field-effect transistor (ggTFET)</subject><subject>Heating systems</subject><subject>Integrated circuits</subject><subject>Lattices</subject><subject>Logic gates</subject><subject>Semiconductor devices</subject><subject>Static electricity</subject><subject>TFETs</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1rAjEQhkNpofbjXugl0PPamc2uSY5FrRUEPdhziNnZuqKJze4W-u8bUXoYBoZnZngfxp4QhoigXxfTyTAHlMNcSgVFccUGWJYqg3IkrtkAZIGZQBjdsru23QFgUchiwJZz_0Nt13zZrgmeh5p3W-KT0G_2xMd9jOQ7vrLdlq-25MMhleeN5zPbUTaLofcVVXzde097_j5dP7Cb2u5berz0e_aZpuOPbLGczcdvi8zlGrvMaW0lghSFBkdaWSdASwkOLZAqlHa1ckg5bSqpLVWisgrRgRYohcBc3LOX891jDN99SmB2oY8-vTSoVco5grJMFJwpF0PbRqrNMTYHG38NgjlpM0mbOWkzF21p5fm80hDRP64wQWUu_gC6_mcV</recordid><startdate>201801</startdate><enddate>201801</enddate><creator>Yang, Zhaonian</creator><creator>Zhang, Yue</creator><creator>Yang, Yuan</creator><creator>Yu, Ningmei</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3425-3511</orcidid><orcidid>https://orcid.org/0000-0001-6389-7693</orcidid><orcidid>https://orcid.org/0000-0002-4977-7510</orcidid><orcidid>https://orcid.org/0000-0002-1035-1491</orcidid></search><sort><creationdate>201801</creationdate><title>Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET</title><author>Yang, Zhaonian ; Zhang, Yue ; Yang, Yuan ; Yu, Ningmei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-c99a71073490ce98ac309770c1a0e8489cf8c1e2ebd79aed3da811c0931733123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Band-to-band tunneling (BTBT)</topic><topic>Circuit protection</topic><topic>Current density</topic><topic>double current path</topic><topic>Electric potential</topic><topic>electrostatic discharge (ESD)</topic><topic>Electrostatic discharges</topic><topic>Field effect transistors</topic><topic>gate grounded tunnel field-effect transistor (ggTFET)</topic><topic>Heating systems</topic><topic>Integrated circuits</topic><topic>Lattices</topic><topic>Logic gates</topic><topic>Semiconductor devices</topic><topic>Static electricity</topic><topic>TFETs</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Zhaonian</creatorcontrib><creatorcontrib>Zhang, Yue</creatorcontrib><creatorcontrib>Yang, Yuan</creatorcontrib><creatorcontrib>Yu, Ningmei</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang, Zhaonian</au><au>Zhang, Yue</au><au>Yang, Yuan</au><au>Yu, Ningmei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2018-01</date><risdate>2018</risdate><volume>39</volume><issue>1</issue><spage>103</spage><epage>106</epage><pages>103-106</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Gate-grounded tunnel field-effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. It has been reported that two current paths exist when the ggTFET is turned on under the ESD events. In this letter, the double current path phenomenon in ggTFETs is further investigated using TCAD simulation. It is found that the upper path is a hole current path, while the lower path mainly consists of electrons, and the grounded gate is a major factor that influences the double current path phenomenon. The heat and lattice temperature distributions in ggTFETs are also discussed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2017.2778044</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-3425-3511</orcidid><orcidid>https://orcid.org/0000-0001-6389-7693</orcidid><orcidid>https://orcid.org/0000-0002-4977-7510</orcidid><orcidid>https://orcid.org/0000-0002-1035-1491</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Band-to-band tunneling (BTBT) Circuit protection Current density double current path Electric potential electrostatic discharge (ESD) Electrostatic discharges Field effect transistors gate grounded tunnel field-effect transistor (ggTFET) Heating systems Integrated circuits Lattices Logic gates Semiconductor devices Static electricity TFETs |
| title | Investigation of the Double Current Path Phenomenon in Gate-Grounded Tunnel FET |
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