Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties

In this paper, we report, through a comparative analysis of static and dynamic measurements, on the impact of mode hopping on the overall intensity noise dynamics of InGaN edge emitting lasers. Mode clustering usually observed in InGaN lasers enhances the mode competition and then the laser intensit...

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Veröffentlicht in:	IEEE journal of quantum electronics 2018-02, Vol.54 (1), p.1-7
Hauptverfasser:	Congar, Antoine, Hussain, Kamal, Pareige, Christelle, Butte, Raphael, Grandjean, Nicolas, Besnard, Pascal, Trebaol, Stephane
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences Laser modes Laser noise Measurement by laser beam nonlinear gain Optical pumping Optics Photonic Relative intensity noise (RIN) semiconductor GaN lasers Semiconductor lasers
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