Vertical Transistor With n-Bridge and Body on Gate for Low-Power 1T-DRAM Application

In this paper, we propose a vertical transistor with n-bridge and body on gate (BOG-DRAM) for Low-power 1T-DRAM application. The vertical channel of the device can reduce the short-channel effect and improve scalability. The storage region stacked on the gate leads to the efficient utilization of st...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-12, Vol.64 (12), p.4937-4945
Hauptverfasser:	Jyi-Tsong Lin, Hung-Hsiu Lin, Yi-Jie Chen, Cyuan-You Yu, Kranti, Abhinav, Chih-Chia Lin, Wei-Han Lee
Format:	Artikel
Sprache:	eng
Schlagworte:	1T-DRAM DRAM chips Impact ionization junctionless Logic gates Performance evaluation Programming Scalability Transistors vertical channel
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