Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

We report on the estimation of trap capture cross section in AlGaN/GaN HEMTs as a function of bias and temperature. Conductance dispersion technique was employed to study the AlGaN/GaN interface of the devices with a carbon-doped GaN buffer grown on 6-in silicon. While a negligible shift in the thre...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-12, Vol.64 (12), p.4868-4874
Hauptverfasser:	Kumar, Sandeep, Gupta, Priti, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, R., Nath, Digbijoy N.
Format:	Artikel
Sprache:	eng
Schlagworte:	2-D electron gas (2-DEG) AlGaN Aluminum gallium nitride capture cross section Electron traps frequency dispersion G/ω GaN HEMTs high electron mobility transistor (HEMT) Logic gates Temperature measurement Trap Density (Dit) trap time constant (Tit) Wide band gap semiconductors
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